Details

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BUY 2SB1588. https://www.utsource.net/itm/p/12611786.html

Parameter	Symbol	Value	Unit
Collector-Emitter Voltage	VCEO	100	V
Collector-Base Voltage	VCBO	120	V
Emitter-Base Voltage	VEBO	6	V
Collector Current	IC	8	A
Base Current	IB	0.8	A
Power Dissipation	PD	125	W
Junction Temperature	TJ	-55 to +150	掳C
Storage Temperature	TSTG	-65 to +150	掳C

Instructions for Use:

1. Handling Precautions: Avoid exceeding the maximum ratings listed in the table to prevent damage to the device.
2. Mounting: Ensure proper heat dissipation if operating near maximum power dissipation levels. Consider using a heatsink when necessary.
3. Soldering: Do not exceed a soldering temperature of 300掳C for more than 10 seconds per operation. Allow adequate cooling between operations.
4. Storage: Store in a dry environment within the storage temperature range to avoid damage.
5. Electrostatic Sensitivity: Handle with care to avoid electrostatic discharge (ESD) which can damage the transistor.
6. Application Circuits: Refer to application notes or typical circuit diagrams provided by the manufacturer for optimal performance and safety guidelines.

(For reference only)