Details

---

BUY 2SK851 https://www.utsource.net/itm/p/12611788.html

Parameter	Symbol	Min	Typ	Max	Unit
Drain-Source Voltage	Vds	-		450	V
Gate-Source Voltage	Vgs	-20		10	V
Continuous Drain	Id	-	10	12	A
Pulse Drain	Idm	-	20	24	A
Power Dissipation	Ptot	-		120	W
Junction Temperature	Tj	-		175	掳C
Storage Temperature	Tstg	-55		150	掳C

Instructions for Use:

1. Handling Precautions:

   • Avoid exceeding the maximum ratings to prevent damage.
   • Use proper ESD (Electrostatic Discharge) protection when handling the device.

2. Mounting:

   • Ensure good thermal management by using appropriate heat sinks.
   • Follow recommended PCB layout guidelines for optimal performance and reliability.

3. Biasing:

   • Apply gate-source voltage (Vgs) within the specified range to control the drain current (Id).
   • Ensure the gate is properly biased to avoid excessive power dissipation.

4. Operation:

   • Operate the device within the specified temperature range to ensure reliable performance.
   • Monitor the junction temperature to prevent overheating.

5. Testing:

   • Use recommended test conditions for accurate characterization.
   • Refer to the datasheet for detailed test procedures and conditions.

6. Storage:

   • Store the device in a dry, cool environment to prevent moisture damage.
   • Keep the device in its original packaging until ready for use.

(For reference only)