Details

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BUY YMP230N55 https://www.utsource.net/itm/p/12611793.html

Parameter	Description	Value
Part Number	Device Part Number	YMP230N55
Type	Device Type	MOSFET
Configuration	Channel Type	N-Channel
Voltage (Vds)	Drain-to-Source Voltage	55 V
Current (Id)	Continuous Drain Current	230 A
Power Dissipation	Maximum Power Dissipation	180 W
Rds(on)	On-State Resistance at 25掳C	1.7 m惟
Gate Charge	Total Gate Charge	94 nC
Switching Frequency	Recommended Operating Frequency	Up to 500 kHz
Package	Housing Style	TO-247
Operating Temp	Junction Temperature Range	-55掳C to 175掳C

Instructions for Use:

1. Installation: Ensure the device is mounted on a suitable heatsink to dissipate heat effectively, especially when operating near maximum power dissipation.
2. Handling Precautions: Handle with care to avoid damage to the gate terminal, which is sensitive to electrostatic discharge (ESD).
3. Storage: Store in a dry environment and follow anti-static storage guidelines to prevent damage.
4. Mounting Orientation: Follow manufacturer recommendations for mounting orientation to ensure optimal thermal performance.
5. Circuit Design: Design circuits ensuring that the maximum voltage and current ratings are not exceeded. Consider derating for higher reliability.
6. Testing: Perform initial testing under controlled conditions to verify correct operation before full-scale deployment.

(For reference only)