Details

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BUY 2SD718. https://www.utsource.net/itm/p/12611816.html

Parameter	Symbol	Min	Typ	Max	Unit
Collector-Emitter Voltage	VCE	-	-	400	V
Emitter-Base Voltage	VEB	-5	-	5	V
Collector Current	IC	-	-	3000	mA
Base Current	IB	-	-	300	mA
Power Dissipation	PT	-	-	62.5	W
Junction Temperature	TJ	-55	-	150	掳C
Storage Temperature	TSTG	-55	-	150	掳C
Thermal Resistance, Junction to Case	RthJC	-	1.6	-	掳C/W

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper heat sinking to maintain junction temperature within specified limits.
   • Handle the transistor with care to avoid mechanical damage.

2. Biasing:

   • Apply base current (I_B) to control the collector current (I_C).
   • Ensure that the base-emitter voltage (V_EB) does not exceed the maximum ratings.

3. Operating Conditions:

   • Do not exceed the maximum collector-emitter voltage (V_CE) or collector current (I_C).
   • Keep the power dissipation (P_T) within the specified range to prevent overheating.

4. Storage:

   • Store the transistor in a dry, cool place within the storage temperature range.
   • Avoid exposure to high humidity and corrosive environments.

5. Testing:

   • Use appropriate test equipment and methods to ensure accurate measurements.
   • Refer to the datasheet for detailed testing procedures and conditions.

6. Safety:

   • Always follow safe handling practices to prevent electrical shock and injury.
   • Use protective gear when working with high voltages and currents.

(For reference only)