Details

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BUY M5M4464P-10 https://www.utsource.net/itm/p/12611820.html

Parameter	Description	Value
Product Name	M5M4464P-10	4-Gb (512Mb x 8) NAND Flash
Package Type	TSOP	48-pin
Operating Voltage (Vcc)	Supply Voltage	2.7 V to 3.6 V
Interface	I/O Standard	ONFI 2.2
Page Size	Data Bytes per Page	2112 bytes
Block Size	Pages per Block	64 pages
Die Organization	Plane Configuration	Single plane
ECC	Error Correction Code	Up to 24-bit ECC per 512-byte
Read/Write Performance	Sequential Read	Up to 40 MB/s
	Sequential Write	Up to 15 MB/s
Endurance	Program/Erase Cycles	100,000 cycles
Data Retention	Minimum Years	10 years
Operating Temperature	Industrial Temperature Range	-40掳C to +85掳C
Storage Temperature	Non-operating Temperature Range	-40掳C to +85掳C

Instructions for Use:

1. Power Supply: Ensure the supply voltage (Vcc) is within the specified range of 2.7 V to 3.6 V.
2. Interface Setup: Configure the interface according to ONFI 2.2 standards for optimal performance.
3. Initialization: Before performing any read/write operations, initialize the device as per the ONFI protocol.
4. ECC Handling: Implement an ECC algorithm capable of correcting up to 24-bit errors per 512-byte block to maintain data integrity.
5. Performance Considerations: For best performance, manage read and write operations considering the sequential speeds provided.
6. Endurance Management: Be aware of the endurance limit of 100,000 program/erase cycles and plan usage accordingly.
7. Environmental Conditions: Operate and store the device within the specified temperature ranges to avoid damage or data loss.
8. Data Retention: Account for a minimum data retention period of 10 years when planning long-term storage solutions.

(For reference only)