Details

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BUY 2SK1818 https://www.utsource.net/itm/p/12611822.html

Parameter	Symbol	Min	Typ	Max	Unit
Drain-Source Voltage	V(DS)	-	-	450	V
Gate-Source Voltage	V(GS)	-30	-	30	V
Drain Current	I(D)	-	20	25	A
Gate Threshold Voltage	V(GSth)	2	4	6	V
Transconductance	gfs	-	15	-	S
Input Capacitance	Ciss	-	1500	-	pF
Output Capacitance	Coss	-	700	-	pF
Reverse Transfer Capacitance	Crss	-	250	-	pF
Junction Temperature	Tj	-55	-	175	掳C
Storage Temperature	Tstg	-55	-	150	掳C

Instructions for Use:

1. Handling Precautions:

   • Handle the 2SK1818 with care to avoid static damage.
   • Ensure that all connections are secure and properly insulated to prevent short circuits.

2. Biasing:

   • Apply the gate-source voltage (V(GS)) within the specified range to control the drain current (I(D)).
   • The gate threshold voltage (V(GSth)) should be considered when setting the bias to ensure the transistor is fully on or off.

3. Thermal Management:

   • Ensure adequate heat dissipation to keep the junction temperature (Tj) below 175掳C.
   • Use appropriate heatsinks or cooling methods if operating at high power levels.

4. Operating Conditions:

   • Do not exceed the maximum drain-source voltage (V(DS)) of 450V.
   • Keep the drain current (I(D)) within the typical range of 20A to 25A to avoid overheating and potential damage.

5. Capacitance Considerations:

   • Account for the input capacitance (Ciss), output capacitance (Coss), and reverse transfer capacitance (Crss) in circuit design, especially in high-frequency applications.

6. Storage:

   • Store the 2SK1818 in a dry, cool place with temperatures between -55掳C and 150掳C to maintain its performance and longevity.

(For reference only)