Details

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BUY 2SK1394 https://www.utsource.net/itm/p/12611824.html

Parameter	Symbol	Value	Unit	Conditions
Drain-source voltage	Vds	30	V
Gate-source voltage	Vgs	卤10	V
Continuous drain current	Id	2.5	A	Ta=25掳C
Pulsed drain current	Ipd	5	A	t=1ms, Duty cycle=1%
Gate-source leakage	Igs	卤1	渭A	Vgs=卤10V, Ta=25掳C
Input capacitance	Ciss	740	pF	Vds=0V, f=1MHz
Output capacitance	Coff	26	pF	Vgs=0V, f=1MHz
Reverse transfer capacitance	Crss	60	pF	Vds=15V, f=1MHz
Threshold gate voltage	Vth	2.5 to 4.0	V	Id=0.25mA, Ta=25掳C

Instructions for Use:

1. Mounting: Ensure the device is mounted on a heat sink if continuous operation near maximum current ratings is anticipated.
2. Voltage Handling: Do not exceed the maximum drain-source voltage (Vds) and gate-source voltage (Vgs) ratings to avoid damage.
3. Current Ratings: Operate within specified continuous and pulsed drain current limits. For pulsed applications, ensure the duty cycle does not exceed 1% for pulse durations up to 1ms.
4. Temperature Considerations: The device is rated for operation at ambient temperatures up to 25掳C for continuous current ratings. Higher temperatures may require derating of the current.
5. Capacitance Values: Use these values for circuit design considerations, especially in high-frequency applications.
6. Threshold Voltage: Ensure the gate voltage is sufficient to fully turn on the device, considering the threshold voltage range provided.
7. Storage and Handling: Store in a dry environment and handle with care to prevent static damage. Use appropriate ESD protection measures.

(For reference only)