Details

---

BUY 2SC4137 https://www.utsource.net/itm/p/12611826.html

Parameter	Symbol	Min	Typ	Max	Unit
Collector-Emitter Voltage	VCEO	-	-	60	V
Collector-Base Voltage	VCBO	-	-	80	V
Emitter-Base Voltage	VEBO	-	-	5	V
Collector Current	IC	-	1	1.5	A
Base Current	IB	-	-	0.15	A
Power Dissipation	PT	-	-	65	W
Junction Temperature	TJ	-	-	150	掳C
Storage Temperature Range	TSTG	-55	-	150	掳C
Transition Frequency	fT	-	250	-	MHz

Instructions for Use:

1. Handling:

   • Handle the 2SC4137 with care to avoid damage to the leads and the silicon die.
   • Use proper anti-static precautions to prevent electrostatic discharge (ESD) damage.

2. Mounting:

   • Ensure that the transistor is securely mounted to a heatsink if operating at high power levels.
   • Use thermal compound between the transistor and the heatsink to improve heat transfer.

3. Biasing:

   • Bias the base of the transistor to ensure it operates in the desired region (cut-off, active, or saturation).
   • Use appropriate resistors to limit base current and prevent excessive heating.

4. Operating Conditions:

   • Do not exceed the maximum ratings listed in the table.
   • Monitor the junction temperature to ensure it remains within safe limits.

5. Testing:

   • Test the transistor using a curve tracer or a multimeter to verify its parameters.
   • Check for short circuits and open circuits in the leads.

6. Storage:

   • Store the 2SC4137 in a dry, cool place away from direct sunlight.
   • Keep the components in their original packaging until ready for use to protect against moisture and static.

7. Soldering:

   • Use a low-wattage soldering iron to avoid overheating the transistor.
   • Solder quickly and avoid prolonged exposure to high temperatures.

8. Applications:

   • The 2SC4137 is suitable for audio amplifiers, power supplies, and other general-purpose NPN transistor applications.

(For reference only)