2SC1398-Q

2SC1398-Q


Specifications
SKU
12611835
Details

BUY 2SC1398-Q https://www.utsource.net/itm/p/12611835.html

Parameter Symbol Min Typical Max Unit
Collector-Emitter Voltage VCE - - 60 V
Collector-Base Voltage VCB - - 60 V
Emitter-Base Voltage VEB - - 5 V
Collector Current IC - - 300 mA
Base Current IB - - 30 mA
Power Dissipation PT - - 625 mW
Operating Temperature TA -55 - 150 掳C
Storage Temperature TSTG -65 - 150 掳C
Transition Frequency fT - 300 - MHz
DC Current Gain hFE 100 400 700 -

Instructions for Use:

  1. Handling:

    • Handle the 2SC1398-Q with care to avoid static damage.
    • Use proper ESD (Electrostatic Discharge) protection measures.
  2. Mounting:

    • Ensure the transistor is securely mounted to prevent mechanical stress.
    • Use a heat sink if the power dissipation exceeds the safe operating limits.
  3. Biasing:

    • Properly bias the base-emitter junction to ensure reliable operation.
    • Avoid exceeding the maximum base current to prevent damage.
  4. Operating Conditions:

    • Do not exceed the maximum ratings for collector-emitter voltage, collector current, or power dissipation.
    • Operate within the specified temperature range to ensure reliability.
  5. Testing:

    • Use a suitable test setup to verify the transistor parameters before integrating it into the circuit.
    • Check for proper connections and soldering to avoid shorts or open circuits.
  6. Storage:

    • Store the 2SC1398-Q in a dry, cool place to prevent moisture damage.
    • Keep the components away from direct sunlight and high temperatures.
  7. Soldering:

    • Use a soldering iron with a temperature-controlled tip to avoid thermal shock.
    • Solder quickly to minimize the time the transistor is exposed to high temperatures.

By following these guidelines, you can ensure the reliable and efficient operation of the 2SC1398-Q transistor.

(For reference only)

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