IR2136J

IR2136J


Specifications
SKU
12611880
Details

BUY IR2136J https://www.utsource.net/itm/p/12611880.html

Parameter Symbol Min Typical Max Unit Condition/Notes
Supply Voltage VCC 4.5 - 20 V Main supply voltage
High-Side Supply Voltage VBOOT 8 - 20 V Bootstrapped supply voltage
Output Current (Source) IOUT(source) - 2 - A Peak output current
Output Current (Sink) IOUT(sink) - 2 - A Peak output current
Input Capacitance CIN - 15 - pF At VCC = 15V, f = 1 MHz
Output Capacitance COUT - 5 - pF At VCC = 15V, f = 1 MHz
Propagation Delay td 45 75 120 ns Typical at VCC = 15V, IOUT = 1A
Rise Time tr 30 60 90 ns Typical at VCC = 15V, IOUT = 1A
Fall Time tf 30 60 90 ns Typical at VCC = 15V, IOUT = 1A
Operating Temperature TA -40 - 125 掳C Ambient temperature range
Storage Temperature TSTG -65 - 150 掳C Storage temperature range

Instructions for Use

  1. Supply Voltage (VCC):

    • Ensure the main supply voltage is within the range of 4.5V to 20V.
    • The device is designed to operate optimally at typical values.
  2. High-Side Supply Voltage (VBOOT):

    • The bootstrapped supply voltage should be between 8V and 20V.
    • This voltage is essential for driving the high-side gate.
  3. Output Current:

    • The peak output current for both source and sink is 2A.
    • Ensure that the load does not exceed this limit to avoid damage.
  4. Capacitance:

    • The input and output capacitances are critical for proper operation.
    • Use appropriate decoupling capacitors to stabilize the supply voltages.
  5. Propagation Delay:

    • The propagation delay is the time it takes for the output to respond to an input change.
    • Typical values are given for standard operating conditions.
  6. Rise and Fall Times:

    • These parameters determine how quickly the output transitions between states.
    • Shorter rise and fall times improve switching efficiency but can increase EMI.
  7. Temperature Ranges:

    • The device can operate in ambient temperatures from -40掳C to 125掳C.
    • Storage temperatures range from -65掳C to 150掳C.
  8. Layout Considerations:

    • Keep the ground plane as large as possible to minimize inductance.
    • Place bypass capacitors close to the power pins to reduce noise.
  9. Bootstrapping:

    • For high-side operation, use a bootstrap capacitor to maintain the high-side gate drive.
    • Ensure the bootstrap diode has a low forward voltage drop to minimize losses.
  10. Protection:

    • Implement overvoltage and overcurrent protection circuits to safeguard the device.
    • Use TVS diodes to protect against transient voltage spikes.

By following these guidelines, you can ensure reliable and efficient operation of the IR2136J.

(For reference only)

View more about IR2136J on main site