Details

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BUY MX66C1024MC-70 https://www.utsource.net/itm/p/12611895.html

Parameter	Description	Value
Part Number	Full Part Number	MX66C1024MC-70
Type	Memory Type	SRAM (Static Random Access Memory)
Density	Memory Density	1 Mbit (128 K x 8)
Vcc Range	Operating Voltage	2.7 V to 3.6 V
Icc	Supply Current (Typical)	5 mA (Active), 1 渭A (Standby)
Access Time	Access Time (Typical)	70 ns
Cycle Time	Cycle Time (Minimum)	70 ns
Package	Package Type	SOIC-8, TSSOP-8
Operating Temperature	Temperature Range	-40掳C to +85掳C
Endurance	Write/Read Cycles	Unlimited
Data Retention	Data Retention	20 years at 25掳C
Organization	Memory Organization	128K x 8
Pins	Number of Pins	8
Pin Configuration	Pin Configuration	Vcc, Vss, A0-A13, DQ0-DQ7, OE#, WE#
Ordering Information	Tape and Reel	3000 units per reel

Instructions for Use:

1. Power Supply:

   • Ensure that the supply voltage (Vcc) is within the specified range of 2.7 V to 3.6 V.
   • Connect the ground pin (Vss) to the system ground.

2. Address Lines:

   • Connect the address lines (A0-A13) to the corresponding address outputs of the microcontroller or processor.
   • The address lines determine the memory location to be accessed.

3. Data Lines:

   • Connect the data lines (DQ0-DQ7) to the data bus of the microcontroller or processor.
   • These lines are used for both reading from and writing to the memory.

4. Control Signals:

   • OE# (Output Enable): Active low. When low, it enables the output drivers, allowing data to be read from the memory.
   • WE# (Write Enable): Active low. When low, it allows data to be written to the memory.

5. Timing Considerations:

   • Ensure that the access time and cycle time requirements are met to avoid data corruption.
   • The typical access time is 70 ns, and the minimum cycle time is also 70 ns.

6. Temperature Range:

   • Operate the device within the temperature range of -40掳C to +85掳C to ensure reliable performance.

7. Handling:

   • Handle the device with care to avoid static damage. Use proper ESD (Electrostatic Discharge) protection measures.
   • Follow standard soldering and reflow profiles for the package type being used.

8. Storage:

   • Store the device in a dry environment to prevent moisture damage.
   • Follow recommended storage conditions to maintain the integrity of the device.

9. Testing:

   • After installation, perform a thorough test to verify the functionality of the memory.
   • Check for correct addressing, data integrity, and timing compliance.

(For reference only)