Details

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BUY IRFB4410 https://www.utsource.net/itm/p/12611900.html

Below is the parameter table and instructions for the IRFB4410 MOSFET:

IRFB4410 Parameter Table

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Drain-Source Voltage	VDSS		-55			V
Gate-Source Voltage	VGSS		-20		+20	V
Continuous Drain Current	ID	TC = 25掳C		38		A
	ID	TC = 75掳C		29		A
Pulse Drain Current	ID(p)	tp = 10 渭s, IGT = 4.5 V		60		A
Power Dissipation	Ptot	TC = 25掳C			230	W
Junction Temperature	TJ				150	掳C
Storage Temperature Range	Tstg		-55		150	掳C
Thermal Resistance, Junction to Case	R胃JC				0.5	掳C/W
Input Capacitance	Ciss	VDS = 25 V, f = 1 MHz		1300		pF
Output Capacitance	Coss	VDS = 25 V, f = 1 MHz		260		pF
Reverse Transfer Capacitance	Crss	VDS = 25 V, f = 1 MHz		160		pF
Gate Charge	Qg	VGS = 10 V, ID = 25 A		100		nC
Threshold Voltage	VGS(th)	ID = 250 渭A	2.0	3.0	4.0	V
On-State Resistance	RDS(on)	VGS = 10 V, ID = 25 A			5.5	m惟
Turn-On Delay Time	td(on)	VGS = 10 V, ID = 25 A, VDS = 25 V		18		ns
Rise Time	tr	VGS = 10 V, ID = 25 A, VDS = 25 V		28		ns
Turn-Off Delay Time	td(off)	VGS = 10 V, ID = 25 A, VDS = 25 V		20		ns
Fall Time	tf	VGS = 10 V, ID = 25 A, VDS = 25 V		25		ns

Instructions for Use

1. Handling and Storage:

   • Store the device in a dry, cool place.
   • Handle with care to avoid damage to the leads and the body of the device.
   • Avoid exposing the device to high temperatures or humidity.

2. Mounting:

   • Ensure proper heat sinking to manage the power dissipation and keep the junction temperature within safe limits.
   • Use a thermal compound between the device and the heat sink for better thermal conductivity.
   • Secure the device firmly to the heat sink to prevent mechanical stress.

3. Electrical Connections:

   • Connect the gate (G), drain (D), and source (S) terminals correctly.
   • Ensure that the gate-source voltage (V_GS) does not exceed the maximum ratings.
   • Use appropriate gate drive circuits to ensure reliable switching.

4. Operating Conditions:

   • Do not exceed the maximum drain-source voltage (V_DSS).
   • Keep the continuous drain current (I_D) within the specified limits for the given case temperature.
   • Monitor the junction temperature (T_J) to ensure it does not exceed 150掳C.

5. Testing:

   • Use a suitable test setup to measure the parameters such as on-state resistance (R_DS(on)), gate charge (Q_g), and switching times.
   • Follow the test conditions specified in the parameter table for accurate measurements.

6. Safety:

   • Always use appropriate safety measures when handling high-voltage and high-current circuits.
   • Ensure that the device is properly isolated from other components during testing and operation.

By following these instructions, you can ensure the reliable and efficient operation of the IRFB4410 MOSFET.

(For reference only)