Details

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BUY 2SC784 https://www.utsource.net/itm/p/12611919.html

Parameter	Symbol	Min	Typ	Max	Unit
Collector-Emitter Voltage	VCE	-	-	60	V
Collector-Base Voltage	VCB	-	-	60	V
Emitter-Base Voltage	VEB	-	-	5	V
Collector Current	IC	-	300	-	mA
Base Current	IB	-	30	-	mA
Power Dissipation	PT	-	-	1000	mW
Transition Frequency	fT	-	150	-	MHz
Storage Temperature Range	TSTG	-55	-	150	掳C
Operating Temperature Range	TOP	-55	-	150	掳C

Instructions for Using 2SC784 Transistor:

1. Handling Precautions:

   • Avoid exposing the transistor to excessive mechanical stress or static electricity.
   • Use appropriate heat sinks if the power dissipation is expected to be high.

2. Mounting:

   • Ensure that the leads are not bent excessively close to the body of the transistor.
   • Soldering should be done quickly to avoid overheating the device. The maximum soldering temperature is 300掳C for no more than 10 seconds.

3. Biasing:

   • The base-emitter voltage (V_BE) should be kept within the specified limits to prevent damage.
   • Use a current-limiting resistor in series with the base to control the base current (I_B).

4. Operating Conditions:

   • Ensure that the collector-emitter voltage (V_CE) and collector current (I_C) do not exceed the maximum ratings.
   • The operating temperature should be within the specified range to ensure reliable performance.

5. Storage:

   • Store the transistor in a dry, cool place away from direct sunlight and sources of heat.
   • Keep the device in its original packaging until ready for use to protect it from static discharge.

6. Testing:

   • Use a multimeter to check the continuity and resistance between the leads before installation.
   • Perform a simple test circuit to verify the functionality of the transistor.

7. Application Notes:

   • The 2SC784 is suitable for general-purpose amplification and switching applications.
   • For high-frequency applications, consider the transition frequency (f_T) to ensure the transistor operates efficiently.

(For reference only)