Details

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BUY 2SD1902R https://www.utsource.net/itm/p/12611921.html

Parameter	Symbol	Min	Typical	Max	Unit	Conditions
Collector-Emitter Voltage	VCEO	-	-	450	V	TA = 25掳C
Emitter-Collector Voltage	VECS	-	-	450	V	TA = 25掳C
Collector-Base Voltage	VCBO	-	-	600	V	TA = 25掳C
Base-Emitter Voltage (Forward)	VBE(on)	1.8	2.2	2.6	V	IC = 1 A, TA = 25掳C
Base-Emitter Voltage (Reverse)	VBR(BE)	-	-	7	V	IB = 100 渭A, TA = 25掳C
Collector Current (Continuous)	IC	-	-	3	A	TC = 25掳C
Collector Current (Pulse)	ICM	-	-	6	A	tp = 1 ms, TA = 25掳C
Power Dissipation	PT	-	-	65	W	TC = 25掳C
Junction Temperature	TJ	-	-	150	掳C	-
Storage Temperature	TSTG	-55	-	150	掳C	-

Instructions for Use:

1. Mounting and Handling:

   • Handle the 2SD1902R with care to avoid mechanical stress and damage.
   • Ensure proper heat sinking if operating at high power levels to maintain junction temperature within safe limits.

2. Biasing:

   • Use appropriate biasing circuits to ensure stable operation.
   • Ensure the base-emitter voltage does not exceed the maximum rating to prevent damage.

3. Operating Conditions:

   • Do not exceed the maximum ratings for collector-emitter voltage, collector current, and power dissipation.
   • Operate within the specified temperature range to ensure reliable performance.

4. Testing:

   • Use a suitable test setup to verify the parameters under controlled conditions.
   • Refer to the datasheet for detailed testing procedures and recommended test circuits.

5. Storage:

   • Store the device in a dry, cool place away from direct sunlight and corrosive environments.
   • Follow ESD (Electrostatic Discharge) precautions to avoid damage during storage and handling.

(For reference only)