CY7C197-15VC

CY7C197-15VC


Specifications
Details

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Parameter Description Value
Part Number Component Identifier CY7C197-15VC
Type Device Type SRAM
Package Enclosure Type TQFP-44
Operating Voltage (Vcc) Supply Voltage Range 2.7V to 3.6V
Data Width Data Bus Width 8 bits
Memory Size Total Memory Storage Capacity 64 K x 8
Access Time (tAA) Access Time from Address Valid to Data Valid 15 ns
Power Consumption Active Current 30 mA @ 3.3V, 10 MHz
Standby Current Quiescent Current 2 渭A
Temperature Range Operating Temperature -40掳C to +85掳C
Write Cycle Time (tWC) Minimum Write Cycle Time 15 ns
Package Material RoHS Compliance Yes

Instructions:

  1. Power Supply Requirements: Ensure the supply voltage (Vcc) is within the specified range of 2.7V to 3.6V.
  2. Address and Data Setup: The device requires valid address inputs before data can be accessed or written. The access time (tAA) must be adhered to for reliable operation.
  3. Write Operations: For write operations, ensure the write cycle time (tWC) of 15 ns is observed to prevent data corruption.
  4. Power Management: To minimize power consumption, use the standby mode where applicable, noting that it draws only 2 渭A.
  5. Environmental Conditions: Operate the device within the specified temperature range (-40掳C to +85掳C) to maintain performance and reliability.
  6. Handling Precautions: Handle with care as electrostatic discharge (ESD) sensitive components; follow standard ESD handling procedures.
(For reference only)

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