Details

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BUY 28C45 https://www.utsource.net/itm/p/12612004.html

Parameter	Description	Value	Unit
Memory Size	Total memory capacity	512 x 8 bits	-
Organization	Memory organization	512 x 8	-
Operating Voltage	Supply voltage range	4.5 to 5.5	V
Standby Current	Current consumption in standby mode	10	渭A
Active Current	Current consumption in active mode	50	mA
Write Cycle Time	Time required for a write operation	5	ms
Read Cycle Time	Time required for a read operation	125	ns
Endurance	Number of write/erase cycles	1,000,000	-
Data Retention	Minimum data retention time	10	years
Operating Temperature	Temperature range for operation	-55 to +125	掳C
Storage Temperature	Temperature range for storage	-65 to +150	掳C
Package Type	Available package types	DIP-8, SOIC-8	-

Instructions:

1. Power Supply:

   • Connect the VCC pin to a power supply within the operating voltage range (4.5V to 5.5V).
   • Connect the GND pin to ground.

2. Address Lines:

   • Connect the address lines (A0-A8) to the microcontroller or other control logic to select the desired memory location.

3. Data Lines:

   • Connect the data lines (D0-D7) to the microcontroller or other control logic for reading from or writing to the memory.

4. Control Signals:

   • Chip Select (CS): Low to enable the device.
   • Write Enable (WE): Low to initiate a write operation.
   • Output Enable (OE): Low to enable read operations.

5. Write Operation:

   • Set CS and WE low.
   • Apply the address to the address lines.
   • Apply the data to be written to the data lines.
   • Maintain CS and WE low for at least the write cycle time (5 ms).
   • Return CS and WE high to complete the write operation.

6. Read Operation:

   • Set CS and OE low.
   • Apply the address to the address lines.
   • Data will be available on the data lines after the read cycle time (125 ns).
   • Return CS and OE high to complete the read operation.

7. Standby Mode:

   • Set CS high to put the device in standby mode, reducing current consumption to the standby current level.

8. Endurance and Data Retention:

   • The device can withstand up to 1,000,000 write/erase cycles.
   • Data is retained for at least 10 years under normal operating conditions.

9. Temperature Considerations:

   • Ensure that the device operates within the specified temperature ranges to avoid damage or reduced performance.

(For reference only)