Details

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BUY TND903 https://www.utsource.net/itm/p/12612010.html

Parameter	Description	Value
Part Number	Component Identifier	TND903
Type	Component Type	Transistor
Package	Encapsulation	TO-220
Polarity	Polarity Type	NPN
Vce(max)	Maximum Collector-Emitter Voltage	60V
Vbe(max)	Maximum Base-Emitter Voltage	7V
Ic(max)	Maximum Collector Current	5A
Ptot(max)	Maximum Total Power Dissipation	65W
fT	Transition Frequency	150MHz
hFE (min)	Minimum Forward Current Gain	100
hFE (max)	Maximum Forward Current Gain	300
Storage Temperature	Operating Temperature Range	-55掳C to +150掳C
Operating Temperature	Storage Temperature Range	-65掳C to +150掳C

Instructions for Use:

1. Handling Precautions:

   • Avoid exposing the TND903 to excessive static electricity.
   • Handle the component by its edges or body, not by the leads.

2. Mounting:

   • Ensure proper heat sinking when mounting the TND903 to dissipate heat effectively.
   • Use a thermal compound between the transistor and the heat sink for better thermal conductivity.

3. Soldering:

   • Preheat the PCB to reduce thermal shock.
   • Solder quickly to avoid overheating the component.
   • Do not exceed 300掳C for more than 10 seconds.

4. Electrical Connections:

   • Connect the collector (C) to the load.
   • Connect the base (B) to the control circuit.
   • Connect the emitter (E) to the common ground.

5. Biasing:

   • Ensure the base-emitter voltage (Vbe) is within the specified range to avoid damage.
   • Use a current-limiting resistor on the base to prevent excessive base current.

6. Testing:

   • Test the transistor in a controlled environment to ensure it meets the specified parameters.
   • Use a multimeter to check for continuity and correct polarity before final assembly.

7. Storage:

   • Store the TND903 in a dry, cool place away from direct sunlight.
   • Keep the component in its original packaging until ready for use.

(For reference only)