HM62256ALFP-10T

HM62256ALFP-10T


Specifications
SKU
12612012
Details

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Parameter Description Value Unit
Device Type Memory Type SRAM (Static Random Access Memory) -
Capacity Storage Capacity 32 K x 8 bits -
Supply Voltage (VCC) Operating Range 4.5 to 5.5 V
Supply Current (ICC) Active Mode 10 mA
Supply Current (ICC) Standby Mode 0.1 渭A
Access Time (tAA) Typical 100 ns
Data Retention Minimum 10 years
Operating Temperature (TA) Commercial 0 to +70 掳C
Operating Temperature (TA) Industrial -40 to +85 掳C
Package Type - 28-pin SOP (Small Outline Package) -
Pin Pitch - 1.27 mm
Mounting Type - Surface Mount -
Endurance Write/Read Cycles Unlimited -

Instructions for Use:

  1. Power Supply:

    • Ensure the supply voltage (VCC) is within the specified range of 4.5 to 5.5V.
    • Connect the ground (GND) pin to a stable ground reference.
  2. Signal Levels:

    • All input signals should be TTL compatible.
    • Output signals are also TTL compatible.
  3. Address Lines:

    • Connect the address lines (A0 to A14) to the appropriate address bus to select the desired memory location.
  4. Data Lines:

    • Connect the data lines (D0 to D7) to the data bus for reading from or writing to the memory.
  5. Control Signals:

    • Chip Select (CS): Low to enable the device, high to disable.
    • Output Enable (OE): Low to enable data output, high to tristate the outputs.
    • Write Enable (WE): Low to write data to the selected address, high to read data from the selected address.
  6. Timing Considerations:

    • Ensure that the access time (tAA) of 100ns is not exceeded to avoid data corruption.
    • Properly manage the timing of control signals to prevent metastability issues.
  7. Handling:

    • Handle the device with care to avoid static damage.
    • Follow standard ESD (Electrostatic Discharge) precautions during handling and installation.
  8. Mounting:

    • Solder the device according to the recommended soldering profile for surface mount components.
    • Ensure proper cooling if operating at higher temperatures or under high current conditions.
  9. Storage:

    • Store the device in a dry, cool place to ensure long-term reliability.
    • Avoid exposure to extreme temperatures and humidity.
  10. Testing:

    • Perform initial testing to verify functionality before integrating into a larger system.
    • Use a known good test pattern to validate memory operations.
(For reference only)

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