Details

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BUY 2SA1386A/2SC3519A https://www.utsource.net/itm/p/12612016.html

Parameter	2SA1386A (PNP)	2SC3519A (NPN)
Type	PNP Transistor	NPN Transistor
Collector-Emitter Voltage (Vceo)	80 V	80 V
Collector-Base Voltage (Vcbo)	80 V	80 V
Emitter-Base Voltage (Vebo)	5 V	5 V
Collector Current (Ic)	1 A	1 A
Power Dissipation (Ptot)	65 W	65 W
DC Current Gain (hFE)	20 - 100	20 - 100
Transition Frequency (ft)	4 MHz	4 MHz
Storage Temperature Range (Tstg)	-55掳C to +150掳C	-55掳C to +150掳C
Operating Temperature Range (Tj)	-55掳C to +150掳C	-55掳C to +150掳C

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking when operating at high power levels to maintain junction temperature within the specified range.
   • Use insulated mounting hardware to avoid short circuits.

2. Biasing:

   • For 2SA1386A (PNP):
     • The base should be biased relative to the emitter.
     • Ensure the base-emitter voltage (Vbe) is within the specified range to avoid damage.
   • For 2SC3519A (NPN):
     • The base should be biased relative to the emitter.
     • Ensure the base-emitter voltage (Vbe) is within the specified range to avoid damage.

3. Protection:

   • Use appropriate protection circuits such as diodes or capacitors to protect against voltage spikes and reverse polarity.
   • Consider using current-limiting resistors to prevent excessive collector current.

4. Handling:

   • Handle with care to avoid mechanical stress on the leads.
   • Use anti-static precautions to prevent damage from electrostatic discharge (ESD).

5. Testing:

   • Test the transistors in a controlled environment to ensure they meet the specified parameters.
   • Use a multimeter or transistor tester to check the continuity and gain of the transistors.

6. Storage:

   • Store in a dry, cool place away from direct sunlight and extreme temperatures.
   • Keep in original packaging until ready for use to protect from ESD.

(For reference only)