Details

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BUY IRF7416TR https://www.utsource.net/itm/p/12612019.html

Below is the parameter table and instructions for the IRF7416TR MOSFET:

IRF7416TR Parameter Table

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Voltage	VDSS	-	60	-	V	-
Gate-Source Voltage	VGSS	-12	-	12	V	-
Continuous Drain Current	ID	-	165	-	A	TC = 25掳C
Pulse Drain Current	ID(p)	-	330	-	A	tp = 10 渭s, IG = 8 A
Power Dissipation	Ptot	-	240	-	W	TC = 25掳C
Junction Temperature	TJ	-	-	175	掳C	-
Storage Temperature Range	Tstg	-55	-	150	掳C	-
Gate Charge	QG	-	139	-	nC	VGS = 10 V
Input Capacitance	Ciss	-	1690	-	pF	VDS = 25 V
Output Capacitance	Coss	-	415	-	pF	VDS = 25 V
Reverse Transfer Capacitance	Crss	-	345	-	pF	VDS = 25 V
On-State Resistance	RDS(on)	-	4.4	-	m惟	VGS = 10 V, ID = 50 A
Threshold Voltage	VGS(th)	2.0	3.0	4.0	V	ID = 250 渭A

Instructions for Use

1. Handling Precautions:

   • ESD Protection: The IRF7416TR is sensitive to electrostatic discharge (ESD). Handle with care and use appropriate ESD protection measures.
   • Storage: Store in a dry, cool place away from direct sunlight and sources of heat.

2. Mounting:

   • Heat Sinking: For high power applications, ensure adequate heat sinking to maintain the junction temperature within safe limits.
   • Torque Specifications: Follow the recommended torque specifications for mounting screws to avoid damage to the device.

3. Biasing:

   • Gate-Source Voltage: Ensure that the gate-source voltage (V_GS) does not exceed the maximum ratings to prevent damage to the gate oxide.
   • Gate Drive: Use a low impedance driver to minimize switching losses and ensure fast turn-on and turn-off times.

4. Operating Conditions:

   • Continuous Operation: Do not exceed the continuous drain current (I_D) or power dissipation (P_tot) ratings at the specified case temperature.
   • Pulse Operation: For pulse operation, ensure that the pulse duration (t_p) and peak current (I_D(p)) do not exceed the specified limits.

5. Testing:

   • Thermal Testing: Use thermal imaging or a thermal couple to monitor the temperature during testing to ensure it remains within the specified range.
   • Electrical Testing: Use a curve tracer or equivalent equipment to verify the electrical parameters such as on-state resistance (R_DS(on)) and threshold voltage (V_GS(th)).

6. Safety:

   • Overvoltage Protection: Implement overvoltage protection circuits to safeguard against transient voltage spikes.
   • Overcurrent Protection: Use fuses or current limiting circuits to protect against excessive current.

By following these parameters and instructions, you can ensure reliable and efficient operation of the IRF7416TR MOSFET.

(For reference only)