Details

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BUY 2SA1726 https://www.utsource.net/itm/p/12612033.html

Parameter	Symbol	Value	Unit
Collector-Emitter Voltage	VCE	80	V
Emitter-Base Voltage	VEB	5	V
Collector Current	IC	1500	mA
Base Current	IB	150	mA
Power Dissipation	PT	65	W
Junction Temperature	TJ	-55 to +150	掳C
Storage Temperature	TSTG	-65 to +150	掳C
Transition Frequency	fT	4	MHz
DC Current Gain (Min)	hFE	20	-
DC Current Gain (Max)	hFE	300	-

Instructions for Use:

1. Mounting and Handling:

   • Handle the 2SA1726 with care to avoid mechanical stress.
   • Ensure proper heat sinking to manage the power dissipation, especially under high current conditions.

2. Biasing:

   • Use appropriate biasing circuits to ensure stable operation.
   • The base-emitter voltage (V_EB) should not exceed 5V to prevent damage.

3. Operating Conditions:

   • Operate within the specified temperature range (-55掳C to +150掳C) to ensure reliable performance.
   • Do not exceed the maximum collector current (1500mA) or collector-emitter voltage (80V).

4. Storage:

   • Store the 2SA1726 in a dry, cool place within the storage temperature range (-65掳C to +150掳C).

5. Testing:

   • Use a suitable test setup to verify the parameters before integrating the transistor into a circuit.
   • Test the DC current gain (h_FE) to ensure it falls within the specified range (20 to 300).

6. Soldering:

   • Use a controlled soldering process to avoid overheating the transistor.
   • Allow the transistor to cool down to room temperature after soldering.

7. Circuit Design:

   • Ensure that the circuit design accounts for the transition frequency (f_T) of 4 MHz to avoid instability in high-frequency applications.

By following these guidelines, you can ensure optimal performance and longevity of the 2SA1726 transistor.

(For reference only)