Details

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BUY FMW79N60S1 https://www.utsource.net/itm/p/12612035.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Breakdown Voltage	BVdss	-	-	790	V	Drain-to-Source Breakdown Voltage
Continuous Drain Current	Id	-	60	-	A	Continuous Drain Current at Tc = 25掳C
Pulse Drain Current	Ibm	-	180	-	A	Pulse Drain Current (t = 10 渭s, Duty Cycle 1%)
Gate Threshold Voltage	Vth	2.0	3.5	5.0	V	Gate Threshold Voltage at Id = 1 mA
On-State Resistance	Rds(on)	-	0.15	-	惟	On-State Resistance at Vgs = 10 V, Id = 60 A
Input Capacitance	Ciss	-	1750	-	pF	Input Capacitance at Vds = 500 V
Output Capacitance	Coss	-	450	-	pF	Output Capacitance at Vds = 500 V
Reverse Transfer Capacitance	Crss	-	1100	-	pF	Reverse Transfer Capacitance at Vds = 500 V
Total Gate Charge	Qg	-	130	-	nC	Total Gate Charge at Vds = 500 V, Id = 60 A
Switching Energy Loss	Eoss	-	350	-	渭J	Output Capacitance Energy at Vds = 500 V
Junction Temperature	Tj	-55	-	175	掳C	Operating Junction Temperature Range
Storage Temperature	Tstg	-55	-	150	掳C	Storage Temperature Range

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper handling to avoid damage to the device.
   • Use appropriate mounting techniques to ensure good thermal contact with the heat sink.

2. Electrical Connections:

   • Connect the drain, source, and gate terminals correctly to avoid short circuits.
   • Use short, low-inductance leads for high-frequency applications.

3. Thermal Management:

   • Ensure adequate cooling to keep the junction temperature within the specified range.
   • Use thermal grease or thermal pads between the device and the heat sink for better thermal conductivity.

4. Gate Drive:

   • Apply a gate voltage (Vgs) sufficient to fully turn on the MOSFET.
   • Use a gate resistor to control the switching speed and reduce ringing.

5. Overvoltage Protection:

   • Implement overvoltage protection circuits to prevent damage from voltage transients.
   • Consider using snubber circuits to dampen voltage spikes.

6. Current Limiting:

   • Use current limiting techniques to protect the MOSFET from excessive current.
   • Monitor the drain current and implement protective measures if necessary.

7. Storage and Transportation:

   • Store the device in a dry, cool place away from direct sunlight.
   • Handle with care during transportation to avoid mechanical damage.

8. Environmental Considerations:

   • Ensure compliance with environmental regulations and standards.
   • Dispose of the device according to local environmental guidelines.

(For reference only)