Details

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BUY 15N80K5 https://www.utsource.net/itm/p/12612038.html

Below is the parameter table and instructions for the 15N80K5 MOSFET.

Parameter Table

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Voltage	VDS	-	-	800	V	-
Gate-Source Voltage	VGS	-15	-	20	V	-
Continuous Drain Current	ID	-	15	-	A	TC = 25掳C
Pulse Drain Current	IDpeak	-	60	-	A	tp = 10 渭s, IGT = 10 A, TC = 25掳C
Power Dissipation	PTOT	-	-	125	W	TC = 25掳C
Junction Temperature	TJ	-	-	175	掳C	-
Storage Temperature	TSTG	-55	-	150	掳C	-
On-State Resistance	RDS(on)	-	0.65	-	惟	VGS = 10 V, ID = 15 A, TJ = 25掳C
Input Capacitance	Ciss	-	1900	-	pF	VDS = 400 V, f = 1 MHz
Output Capacitance	Coss	-	350	-	pF	VDS = 400 V, f = 1 MHz
Reverse Transfer Capacitance	Crss	-	155	-	pF	VDS = 400 V, f = 1 MHz
Gate Charge	QG	-	115	-	nC	VGS = 15 V, VDS = 400 V, ID = 15 A
Threshold Voltage	VGS(th)	2.5	3.5	4.5	V	ID = 1 mA, TJ = 25掳C
Maximum Gate-Source Voltage	VGS(max)	-15	-	20	V	-

Instructions

1. Handling and Storage:

   • Handle the 15N80K5 with care to avoid mechanical damage.
   • Store in a dry, cool place within the specified storage temperature range (-55掳C to 150掳C).

2. Mounting:

   • Ensure proper heat sinking to maintain the junction temperature (T_J) below 175掳C.
   • Use recommended mounting torque for the screws to ensure good thermal contact.

3. Electrical Connections:

   • Connect the drain (D), source (S), and gate (G) terminals correctly.
   • Use short leads to minimize parasitic inductance and capacitance.

4. Biasing:

   • Apply the gate-source voltage (V_GS) within the safe operating range (-15 V to 20 V).
   • Ensure the gate is properly biased to achieve the desired on-state resistance (R_DS(on)).

5. Overcurrent Protection:

   • Implement overcurrent protection to prevent damage from excessive drain current (I_D).

6. Thermal Management:

   • Monitor the power dissipation (P_TOT) to ensure it does not exceed 125 W at T_C = 25掳C.
   • Use appropriate cooling methods such as heatsinks or forced air cooling.

7. Pulse Operation:

   • For pulse operation, ensure the pulse duration (t_p) and peak current (I_Dpeak) are within the specified limits.

8. Testing:

   • Perform initial testing at room temperature and gradually increase the load to verify performance and stability.

By following these parameters and instructions, you can ensure reliable and efficient operation of the 15N80K5 MOSFET.

(For reference only)