Details

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BUY STD100N10F7 https://www.utsource.net/itm/p/12612068.html

Parameter	Symbol	Min	Typ	Max	Unit
Collector-Emitter Voltage	VCE	-	-	100	V
Emitter-Collector Voltage	VEC	-	-	100	V
Gate-Source Voltage	VGS	-20	-	20	V
Continuous Collector Current	IC	-	-	100	A
Pulse Collector Current (tp = 10 渭s)	ICm	-	-	300	A
Power Dissipation (TC = 25掳C)	PTOT	-	-	1200	W
Junction Temperature	TJ	-55	-	175	掳C
Storage Temperature Range	TSTG	-55	-	150	掳C
Thermal Resistance, Junction to Case	RthJC	-	-	0.35	K/W

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper heat sinking to manage thermal resistance.
   • Handle with care to avoid damage to the gate terminal.

2. Electrical Connections:

   • Connect the collector (C) to the positive supply.
   • Connect the emitter (E) to the load and ground.
   • Apply the gate (G) voltage carefully to control the device.

3. Operating Conditions:

   • Do not exceed the maximum ratings listed in the table.
   • Ensure the junction temperature does not exceed 175掳C.
   • Use appropriate cooling methods (e.g., heatsinks, fans) for high power applications.

4. Storage and Environmental Considerations:

   • Store the device in a dry environment within the specified storage temperature range.
   • Avoid exposure to corrosive environments or excessive humidity.

5. Testing and Diagnostics:

   • Use a multimeter to check continuity and resistance between terminals.
   • Perform tests under controlled conditions to ensure accurate readings.

6. Safety Precautions:

   • Always disconnect power before making connections or performing maintenance.
   • Use protective equipment (gloves, goggles) when handling high-power devices.

(For reference only)