1N5811

1N5811


Specifications
SKU
12612072
Details

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Parameter Value
Type Schottky Barrier Diode
Maximum Repetitive Peak Forward Current (IFSM) 30 A (8.3 ms single half sine-wave)
Average Rectified Output Current (IO) 1 A (Tc = 75掳C)
Peak Reverse Voltage (VRRM) 40 V
Maximum DC Blocking Voltage (VR) 30 V
Forward Voltage (VF) 0.42 V (IF = 1 A, TJ = 25掳C)
Reverse Recovery Time (trr) 35 ns
Operating Junction Temperature Range (TJ) -65掳C to +150掳C
Storage Temperature Range (TSTG) -65掳C to +150掳C
Thermal Resistance, Junction to Case (R胃JC) 18 掳C/W
Package Type DO-41 (TO-220AB)

Instructions for Use

  1. Mounting and Handling:

    • Handle the diode with care to avoid mechanical damage.
    • Ensure proper heat sinking if operating at high currents or temperatures.
  2. Soldering:

    • Preheat the diode to 125掳C before soldering to reduce thermal shock.
    • Soldering temperature should not exceed 260掳C.
    • Soldering time should be kept to a minimum, typically less than 10 seconds.
  3. Electrical Connections:

    • Connect the cathode (K) to the positive side of the circuit.
    • Connect the anode (A) to the negative side of the circuit.
    • Ensure that the reverse voltage does not exceed the maximum rating (40 V).
  4. Thermal Management:

    • For continuous operation at high currents, use a heatsink to maintain the junction temperature within the specified range.
    • Ensure adequate ventilation to prevent overheating.
  5. Storage:

    • Store in a dry, cool place away from direct sunlight and corrosive substances.
    • Avoid exposure to high humidity to prevent moisture ingress.
  6. Testing:

    • Use a multimeter to test the diode for continuity.
    • Forward resistance should be low, and reverse resistance should be high.
    • If the diode fails these tests, it may be damaged and should be replaced.
  7. Compliance:

    • Ensure that the diode is used in compliance with all relevant safety and regulatory standards.
(For reference only)

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