Details

---

BUY 2SK1517 https://www.utsource.net/itm/p/12612075.html

Parameter	Symbol	Value	Unit
Drain-Source Voltage	V(DS)	300	V
Gate-Source Voltage	V(GS)	卤20	V
Drain Current	I(D)	10	A
Gate Threshold Voltage	V(GS(th))	2.0 to 4.0	V
Input Capacitance	Ciss	1400	pF
Output Capacitance	Coss	260	pF
Reverse Transfer Capacitance	Crss	250	pF
Power Dissipation	P(TOT)	120	W
Junction Temperature	Tj	-55 to 150	掳C
Storage Temperature	Tstg	-55 to 150	掳C

Instructions for Use:

1. Mounting:

   • Ensure that the device is securely mounted to a heatsink to dissipate heat effectively.
   • Use thermal paste between the device and the heatsink to improve thermal conductivity.

2. Biasing:

   • Apply a gate-source voltage (V(GS)) within the specified range to control the drain current (I(D)).
   • The gate threshold voltage (V(GS(th))) is typically between 2.0 and 4.0 V, so ensure the gate voltage is sufficient to turn the transistor on.

3. Operation:

   • Do not exceed the maximum drain-source voltage (V(DS)) of 300 V or the maximum drain current (I(D)) of 10 A to avoid damage.
   • Keep the junction temperature (Tj) within the range of -55 to 150掳C to ensure reliable operation.

4. Storage:

   • Store the device in a dry, cool place with temperatures between -55 and 150掳C.
   • Handle the device with care to avoid static discharge, which can damage the sensitive components.

5. Testing:

   • Before installing the device, test it using a multimeter or a dedicated MOSFET tester to ensure it meets the specified parameters.
   • Check for any short circuits or open circuits between the terminals.

6. Safety:

   • Always use appropriate safety equipment when handling high-voltage and high-current circuits.
   • Follow all relevant electrical safety guidelines and regulations.

By following these instructions, you can ensure the reliable and safe operation of the 2SK1517 MOSFET.

(For reference only)