Details

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BUY APT60D60B https://www.utsource.net/itm/p/12612132.html

Parameter	Symbol	Min	Typical	Max	Unit	Notes
Breakdown Voltage	V(BR)DSS	-	600	-	V
Maximum Drain Current	ID	-	60	-	A	@ VGS = 10V, Tc = 25掳C
Gate-Source Voltage	VGS	-10	0	10	V
Gate Charge	QG	-	130	-	nC
Input Capacitance	Ciss	-	2850	-	pF	@ VDS = 400V, f = 1MHz
Output Capacitance	Coss	-	120	-	pF	@ VDS = 400V, f = 1MHz
Reverse Transfer Capacitance	Crss	-	70	-	pF	@ VDS = 400V, f = 1MHz
On-State Resistance	RDS(on)	-	0.065	-	惟	@ VGS = 10V, ID = 20A, Tc = 25掳C
Total Power Dissipation	PD	-	-	320	W	@ Tc = 25掳C
Junction Temperature	TJ	-	-	150	掳C
Storage Temperature	TSTG	-55	-	150	掳C

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper handling to avoid damage to the device.
   • Use appropriate mounting techniques to ensure good thermal contact with the heat sink.

2. Electrical Connections:

   • Connect the drain (D), gate (G), and source (S) terminals correctly.
   • Ensure that the gate-source voltage (VGS) does not exceed the maximum rating of 卤10V.

3. Thermal Management:

   • The device should be mounted on a suitable heat sink to dissipate the power efficiently.
   • Monitor the junction temperature (TJ) to ensure it does not exceed 150掳C.

4. Operating Conditions:

   • Operate the device within the specified breakdown voltage (V(BR)DSS) and current (ID) limits.
   • Ensure the input capacitance (Ciss) and output capacitance (Coss) are considered in circuit design to avoid instability.

5. Storage:

   • Store the device in a dry, cool place within the storage temperature range (-55掳C to 150掳C).

6. Testing:

   • Perform initial testing under controlled conditions to verify the device parameters.
   • Use appropriate test equipment to measure parameters such as RDS(on), QG, and capacitances.

7. Safety:

   • Follow all safety guidelines when handling high-voltage and high-current circuits.
   • Ensure proper grounding and isolation to prevent electrical shock.

(For reference only)