Details

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BUY IFX1050GVIOXUMA1 https://www.utsource.net/itm/p/12612138.html

Parameter	Description	Value
Device Type	Type of device	MOSFET
Package	Package type	TO-263-3 (D2PAK)
VDSS	Drain-to-Source Voltage	60 V
RDS(on)	On-State Resistance at 25°C, VGS = 10 V	4.5 mΩ
ID	Continuous Drain Current at TC = 25°C	105 A
PTOT	Total Power Dissipation at TA = 25°C	180 W
fSW	Switching Frequency	500 kHz
QG	Gate Charge	115 nC
QOSS	Output Capacitance Charge	7 nC
TJ	Junction Temperature Range	-55°C to 175°C
TSTG	Storage Temperature Range	-65°C to 150°C
VGS(th)	Gate Threshold Voltage	2.0 V to 4.0 V
Eoss	Energy Stored in Output Capacitance	28 nJ

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper heat sinking to maintain the junction temperature within the specified range.
   • Handle with care to avoid damage to the leads and package.

2. Biasing:

   • Apply the gate voltage (V_GS) within the recommended range to ensure reliable operation.
   • Use a gate resistor to limit the inrush current during switching.

3. Thermal Management:

   • Ensure adequate cooling to keep the junction temperature below the maximum rating.
   • Consider using a heatsink or forced air cooling if operating at high power levels.

4. Switching:

   • Operate within the specified switching frequency to avoid excessive losses.
   • Use appropriate snubber circuits to reduce voltage spikes and electromagnetic interference (EMI).

5. Storage:

   • Store in a dry, cool place within the specified storage temperature range.
   • Avoid exposure to high humidity and corrosive environments.

6. Testing:

   • Perform initial testing under controlled conditions to verify proper operation.
   • Use a current-limited power supply to prevent damage during testing.

7. Safety:

   • Follow all safety guidelines and regulations when handling and operating the device.
   • Ensure proper grounding and isolation to prevent electrical hazards.

(For reference only)