M27C2001-10-F1

M27C2001-10-F1


Specifications
Details

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Parameter Description
Device Type UV Erasable Programmable Read-Only Memory (EPROM)
Manufacturer STMicroelectronics
Part Number M27C2001-10-F1
Package Type 28-Pin DIP (Dual In-line Package)
Memory Size 256 Kbits (32K x 8)
Voltage Supply Vcc = 5V 卤 0.25V
Operating Temp. -40掳C to +85掳C
Programming Volt. Vpp = 12.5V 卤 0.5V
Access Time 90ns
Endurance 1,000,000 Program/Erase Cycles
Data Retention 10 years
Erase Method Ultraviolet Light
Standby Current 1 渭A max @ Vcc = 5V
Active Current 20 mA max @ Vcc = 5V

Instructions for Use:

  1. Power Supply: Ensure the device is powered with a supply voltage of 5V 卤 0.25V.
  2. Programming Voltage: Apply a programming voltage (Vpp) of 12.5V 卤 0.5V during write operations.
  3. Erase Procedure: Expose the device to ultraviolet light for approximately 20 minutes to erase data. The window on top of the package must be exposed directly to UV light.
  4. Handling Precautions: Handle the device carefully to avoid damage from electrostatic discharge (ESD). Use appropriate ESD protection measures.
  5. Storage: Store in a cool, dry place away from direct sunlight when not in use.
  6. Installation: Ensure proper alignment and insertion into the socket or PCB to prevent physical damage to pins.
  7. Testing: Verify functionality using standard EPROM testing procedures after installation.

For detailed specifications and application notes, refer to the official datasheet provided by STMicroelectronics.

(For reference only)

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