Details

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BUY VN7040ASTR https://www.utsource.net/itm/p/12612186.html

Parameter	Symbol	Min	Typ	Max	Unit	Notes
Drain-Source Voltage	VDS	-	60	-	V
Gate-Source Voltage	VGS	-15	-	15	V
Continuous Drain Current	ID	-	2.5	3.5	A	@ TA = 25°C
Pulse Drain Current	ID(p)	-	4.5	-	A	@ TC = 25°C, tp = 100 μs, Duty Cycle = 1%
RDS(on) at VGS = 4.5V	RDS(on)	-	0.045	0.055	Ω	@ TA = 25°C
RDS(on) at VGS = 2.5V	RDS(on)	-	0.07	0.08	Ω	@ TA = 25°C
Gate Charge	QG	-	35	45	nC
Total Power Dissipation	PTOT	-	-	1.5	W	@ TC = 25°C
Junction Temperature	TJ	-	-	150	°C
Storage Temperature	TSTG	-55	-	150	°C

Instructions for Use:

1. Handling Precautions:

   • The VN7040ASTR is sensitive to electrostatic discharge (ESD). Handle with care and use proper ESD protection equipment.
   • Avoid exposing the device to high temperatures or mechanical stress during handling and assembly.

2. Mounting:

   • Ensure that the device is mounted on a heatsink if continuous operation at high power levels is required.
   • Use thermal paste between the device and the heatsink to improve thermal conductivity.

3. Biasing:

   • Apply a gate-source voltage (V_GS) within the specified range to turn the device on or off.
   • For optimal performance, use a gate resistor to limit the current and prevent oscillations.

4. Operating Conditions:

   • Ensure that the drain-source voltage (V_DS) does not exceed the maximum rating.
   • The drain current (I_D) should be within the continuous and pulse limits specified in the table.
   • Monitor the junction temperature (T_J) to avoid exceeding the maximum allowable value.

5. Storage:

   • Store the device in a dry, cool place away from direct sunlight and sources of heat.
   • Follow recommended storage conditions to ensure long-term reliability.

6. Testing:

   • Use a suitable test setup to verify the device parameters before integrating it into your application.
   • Refer to the datasheet for detailed testing procedures and recommended test circuits.

(For reference only)