Details
BUY IRC530 https://www.utsource.net/itm/p/12612243.html
| Parameter | Description |
|---|---|
| Part Number | IRC530 |
| Type | MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) |
| Configuration | N-channel Enhancement Mode |
| VDS (V) | Drain-to-Source Voltage: ±60V |
| RDS(on) (Ω) | On-State Resistance: 0.045 Ω at VGS = 10V |
| ID (A) | Continuous Drain Current: 27A at TC = 25°C |
| PD (W) | Total Power Dissipation: 140W at TC = 25°C |
| fT (MHz) | Transition Frequency: 3.4 MHz |
| Qg (nC) | Total Gate Charge: 79 nC |
| Package Type | TO-220 |
Instructions for Use:
- Mounting: Ensure the device is mounted on a heatsink if operating near maximum power dissipation to maintain junction temperature within safe limits.
- Gate Drive: Apply sufficient gate voltage (typically ≥10V) to fully enhance the channel and minimize RDS(on).
- Handling Precautions: Handle with care to avoid damage from electrostatic discharge (ESD). Use proper ESD protection equipment.
- Storage: Store in original packaging in a dry, cool place away from direct sunlight.
- Installation: Follow manufacturer guidelines for soldering and installation to ensure optimal performance and reliability.
- Derating: For continuous operation above ambient temperatures, derate the power dissipation according to the derating factor specified in the datasheet.
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