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BUY IPD200N15N3GATMA1 https://www.utsource.net/itm/p/12612273.html

Below is the parameter table and instructions for the IPD200N15N3GATMA1, which is a N-Channel Power MOSFET from Infineon Technologies.

Parameter Table for IPD200N15N3GATMA1

Parameter	Symbol	Min	Typ	Max	Unit	Test Conditions
Drain-Source Voltage	( V_ )	-	1500	-	V	-
Gate-Source Voltage	( V_ )	-20	0	20	V	-
Continuous Drain Current	( I_ )	-	200	-	A	( T_ = 25^circ C )
Pulsed Drain Current	( I_ )	-	400	-	A	( t_ = 10 mu s, I_ = 2 times I_ )
Power Dissipation	( P_ )	-	1250	-	W	( T_ = 25^circ C )
Thermal Resistance (Junction to Case)	( R_{theta JC} )	-	0.25	-	K/W	-
Thermal Resistance (Junction to Ambient)	( R_{theta JA} )	-	62	-	K/W	-
On-State Resistance	( R_{DS(on)} )	-	1.8	-	m惟	( V_ = 10 V, I_ = 200 A )
Input Capacitance	( C_ )	-	3500	-	pF	( V_ = 500 V, f = 1 MHz )
Output Capacitance	( C_ )	-	100	-	pF	( V_ = 500 V, f = 1 MHz )
Reverse Transfer Capacitance	( C_ )	-	750	-	pF	( V_ = 500 V, f = 1 MHz )
Gate Charge	( Q_ )	-	180	-	nC	( V_ = 500 V, I_ = 200 A )
Threshold Voltage	( V_{GS(th)} )	2.0	4.0	6.0	V	( I_ = 250 mu A )
Total Gate Charge	( Q_ )	-	200	-	nC	( V_ = 500 V, I_ = 200 A )

Instructions for Use

1. Handling Precautions:

   • ESD Sensitivity: The device is sensitive to electrostatic discharge (ESD). Handle with appropriate ESD protection.
   • Storage: Store in a dry, cool place away from direct sunlight and sources of heat.

2. Mounting:

   • Thermal Management: Ensure adequate heat sinking to maintain the junction temperature within safe limits. The thermal resistance ( R_{theta JC} ) should be considered when designing the heat sink.
   • Mechanical Stress: Avoid excessive mechanical stress on the leads and body of the device during mounting.

3. Operating Conditions:

   • Voltage Ratings: Do not exceed the maximum drain-source voltage (( V_ )) and gate-source voltage (( V_ )).
   • Current Ratings: Ensure that the continuous drain current (( I_ )) and pulsed drain current (( I_ )) do not exceed the specified limits.
   • Temperature Range: Operate the device within the recommended temperature range to avoid thermal damage.

4. Circuit Design:

   • Gate Drive: Use a low-impedance gate drive circuit to minimize switching losses and ensure reliable operation.
   • Snubber Circuits: Consider using snubber circuits to protect against voltage transients, especially in high-frequency applications.

5. Testing:

   • Initial Testing: Perform initial testing at room temperature to verify the device parameters before subjecting it to more extreme conditions.
   • Periodic Testing: Regularly test the device to ensure it continues to meet the specified parameters over time.

6. Safety:

   • Isolation: Ensure proper isolation between high-voltage and low-voltage sections of the circuit to prevent electrical shock.
   • Overcurrent Protection: Implement overcurrent protection to prevent damage from short circuits or excessive load currents.

By following these instructions, you can ensure the reliable and efficient operation of the IPD200N15N3GATMA1 N-Channel Power MOSFET.

(For reference only)