Details

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BUY IS42S16320F-6TL https://www.utsource.net/itm/p/12612298.html

Parameter	Description	Value
Device Type	32 M-Bit (4M x 8, 2M x 16, 1M x 32) Synchronous DRAM	-
Organization	4 Banks	-
Data Width	8/16/32 bits	-
Supply Voltage (Vcc)	Operating Range	2.25 V to 3.6 V
Supply Voltage (Vccq)	I/O Power Supply	2.25 V to 3.6 V
Operating Temperature	Commercial	0掳C to 70掳C
Industrial	-40掳C to 85掳C
Access Time (tAC)	-	6 ns
CAS Latency (CL)	-	2, 3
RAS# to CAS# Delay (tRCD)	-	2, 3 cycles
Row Active to Precharge Delay (tRAS)	-	5, 6 cycles
Refresh Cycle Time (tREF)	-	64 ms (8192 refresh cycles)
Write Recovery Time (tWR)	-	2 cycles
Exit Self-Refresh to Access Time (tXSR)	-	75 ns
Power Down Exit Time (tXP)	-	20 ns
Package Type	-	BGA (Ball Grid Array)
Pin Count	-	48 pins

Instructions for Use:

1. Power Supply:

   • Ensure that both Vcc and Vccq are within the specified operating range (2.25 V to 3.6 V).
   • Use decoupling capacitors close to the power supply pins to reduce noise and ensure stable operation.

2. Temperature Considerations:

   • Operate the device within the specified temperature range for commercial (0掳C to 70掳C) or industrial (-40掳C to 85掳C) applications.

3. Timing Parameters:

   • Adhere to the specified access time (tAC) of 6 ns.
   • Set the CAS latency (CL) to either 2 or 3 cycles.
   • Ensure the RAS# to CAS# delay (tRCD) is set to 2 or 3 cycles.
   • The row active to precharge delay (tRAS) should be 5 or 6 cycles.
   • Maintain a refresh cycle time (tREF) of 64 ms with 8192 refresh cycles.
   • Set the write recovery time (tWR) to 2 cycles.
   • Ensure the exit self-refresh to access time (tXSR) is at least 75 ns.
   • The power-down exit time (tXP) should be 20 ns.

4. Initialization:

   • After power-up, perform a mode register set (MRS) command to initialize the device.
   • Set the mode register according to the desired operating parameters (e.g., CAS latency, burst length).

5. Memory Operations:

   • Use the appropriate control signals (RAS#, CAS#, WE#, etc.) to perform read, write, and refresh operations.
   • Ensure that the address lines are correctly driven during memory access.

6. Self-Refresh Mode:

   • Enter self-refresh mode by asserting the self-refresh request signal.
   • To exit self-refresh mode, deassert the self-refresh request signal and wait for the tXSR period before accessing the memory.

7. Power Management:

   • Use the power-down mode to reduce power consumption when the device is not in use.
   • To exit power-down mode, deassert the power-down signal and wait for the tXP period before accessing the memory.

8. Package Handling:

   • Handle the BGA package with care to avoid damage to the balls.
   • Follow recommended soldering and reflow profiles to ensure reliable bonding.

For detailed information and specific application notes, refer to the datasheet provided by the manufacturer.

(For reference only)