Details

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BUY 17N80C3 https://www.utsource.net/itm/p/12612312.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Breakdown Voltage	V(BR)DSS	-	800	-	V	Drain-to-Source Breakdown Voltage
Continuous Drain Current (Tc = 25掳C)	ID	-	17	-	A	Continuous Drain Current at Tc = 25掳C
Continuous Drain Current (Tc = 100掳C)	ID	-	8.5	-	A	Continuous Drain Current at Tc = 100掳C
Gate Threshold Voltage	VGS(th)	2.0	4.0	6.0	V	Gate Threshold Voltage
On-State Resistance (VGS = 10V, ID = 17A)	RDS(on)	-	0.18	-	惟	On-State Resistance
Total Power Dissipation (Tc = 25掳C)	PD	-	100	-	W	Total Power Dissipation at Tc = 25掳C
Junction Temperature	TJ	-55	-	150	掳C	Operating Junction Temperature Range
Storage Temperature	TSTG	-55	-	150	掳C	Storage Temperature Range

Instructions for Use:

1. Handling Precautions:

   • Handle the 17N80C3 with care to avoid damage to the pins and body.
   • Use proper ESD (Electrostatic Discharge) protection when handling the device.

2. Mounting:

   • Ensure that the device is mounted on a heatsink if it will be operating near its maximum power dissipation.
   • Use thermal paste between the device and the heatsink to improve heat transfer.

3. Biasing:

   • Apply the gate voltage (VGS) within the specified range to ensure reliable operation.
   • Avoid exceeding the maximum gate threshold voltage to prevent damage to the gate oxide.

4. Current Limiting:

   • Use appropriate current limiting resistors or circuits to protect the device from overcurrent conditions.
   • Monitor the drain current (ID) to ensure it does not exceed the rated values, especially at higher temperatures.

5. Thermal Management:

   • Keep the junction temperature (TJ) within the specified range to ensure long-term reliability.
   • If the device is operating in high ambient temperatures, consider using forced air cooling or a larger heatsink.

6. Storage:

   • Store the device in a dry, cool place within the specified storage temperature range.
   • Avoid exposing the device to extreme humidity or corrosive environments.

7. Testing:

   • Before installing the device in a circuit, test it using a known good setup to verify its functionality.
   • Use a multimeter or oscilloscope to measure key parameters such as VGS, VDS, and ID.

8. Safety:

   • Always follow safety guidelines when working with high voltages and currents.
   • Ensure that the circuit is properly isolated and grounded to prevent electrical shock.

By following these instructions, you can ensure optimal performance and longevity of the 17N80C3 MOSFET.

(For reference only)