Details

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BUY K9F1G08UOB https://www.utsource.net/itm/p/12612342.html

Parameter	Description
Device Type	NAND Flash Memory
Density	1 Gbit (128 MByte)
Organization	8,192 Pages x 2,048 Bytes/Page + 64 Bytes/Spare Area
Interface	8-bit I/O interface
Voltage (Vcc)	3.3V 卤 0.3V (I/O), 3.3V 卤 0.3V (Core)
Operating Temp.	-40掳C to +85掳C
Package	TSOP-48
Data Retention	10 years at 25掳C
Erase/Program	Page Program: 200 渭s max, Block Erase: 2 ms max
Endurance	100,000 program/erase cycles per block
Access Time	tR = 25 ns typical

Instructions for Use

1. Initialization

   • Apply Vcc and ground.
   • Ensure all inputs are held at valid logic levels before applying power.

2. Command Sequence

   • All operations (read, write, erase) start with a command sequence.
   • Commands must be sent in the correct order as specified in the datasheet.

3. Read Operation

   • Send read command followed by column address, then row address.
   • Data is output on the rising edge of the clock after the last address byte.

4. Page Program

   • Load data into the page buffer using the Program Load command.
   • Execute the Page Program command to write data from the buffer to the flash memory.

5. Block Erase

   • Select the block to be erased using the Block Erase command.
   • Wait for the operation to complete by polling the status register or using the Ready/Busy pin.

6. Error Handling

   • Check the status register after each operation for errors.
   • Implement error correction code (ECC) algorithms as necessary based on the application requirements.

7. Power Management

   • For low-power applications, use the Deep Power Down mode by sending the appropriate command.
   • Restore normal operation by sending an exit command.

8. Handling

   • Handle with care to avoid damage from electrostatic discharge (ESD).
   • Follow proper handling procedures during installation and operation.

(For reference only)