Details

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BUY D45H5 https://www.utsource.net/itm/p/12612402.html

Parameter	Value	Unit
Type	NPN Transistor	-
Collector-Emitter Voltage (Vce)	50	V
Emitter-Base Voltage (Veb)	6	V
Collector Current (Ic)	1.5	A
Power Dissipation (Ptot)	62.5	W
Transition Frequency (Ft)	150	MHz
Storage Temperature (Tstg)	-65 to 150	掳C
Operating Temperature (Toper)	-65 to 150	掳C
Package	TO-3	-

Instructions for Use:

1. Handling Precautions:

   • Handle the D45H5 with care to avoid damage to the leads or body.
   • Use appropriate ESD (Electrostatic Discharge) protection to prevent damage from static electricity.

2. Mounting:

   • Ensure the transistor is securely mounted to a heatsink if operating near its maximum power dissipation.
   • Use thermal compound between the transistor and heatsink to improve heat transfer.

3. Soldering:

   • Solder the leads quickly to avoid overheating the transistor.
   • Use a soldering iron with a temperature not exceeding 300掳C for a duration of no more than 5 seconds per joint.

4. Biasing:

   • Ensure proper biasing of the base-emitter junction to avoid saturation or cutoff conditions.
   • Use resistors to limit base current and protect the transistor from overcurrent.

5. Operating Conditions:

   • Do not exceed the maximum ratings listed in the parameter table.
   • Monitor the temperature of the transistor during operation to ensure it remains within safe limits.

6. Storage:

   • Store the D45H5 in a dry, cool place away from direct sunlight.
   • Keep the components in their original packaging until ready for use to prevent physical damage.

(For reference only)