Details

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BUY GD25Q127CYIGR https://www.utsource.net/itm/p/12612406.html

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Supply Voltage	Vcc	Operating	2.7	-	3.6	V
Standby Current	Icc	Vcc = 3.0V, Standby Mode	-	1	5	μA
Active Current	Icc	Vcc = 3.0V, Active Mode	8	20	40	mA
Page Program Time	tPP		-	2.5	5	ms
Sector Erase Time	tSE		-	200	400	ms
Block Erase Time	tBE		-	200	400	ms
Chip Erase Time	tCE		-	20	40	s
Data Retention		@25°C	10	-	-	years
Operating Temperature			-40	-	85	°C
Storage Temperature			-40	-	125	°C

Instructions for GD25Q127CYIGR:

1. Power Supply:

   • Ensure the supply voltage (Vcc) is within the specified range of 2.7V to 3.6V.

2. Initialization:

   • After powering up, wait for a sufficient stabilization period before sending commands to the device.

3. Read Operations:

   • Use the Read command (0x03) to read data from the memory array.
   • For fast read operations, use commands like Fast Read (0x0B).

4. Write Operations:

   • Before writing data, ensure the Write Enable Latch (WEL) is set by issuing the Write Enable (0x06) command.
   • Perform page programming using the Page Program command (0x02).
   • After writing, check the status register to confirm the operation is complete.

5. Erase Operations:

   • To erase sectors or blocks, issue the appropriate erase command (Sector Erase 0x20, Block Erase 0x52/0xD8).
   • For chip erase, use the Chip Erase command (0xC7).

6. Status Checking:

   • Use the Read Status Register command (0x05) to monitor the busy/idle state of the device during program and erase cycles.

7. Temperature Considerations:

   • Operate within the specified temperature range (-40°C to +85°C) for reliable performance.
   • Store the device within the storage temperature range (-40°C to +125°C).

8. Data Retention:

   • Data retention is guaranteed for at least 10 years at 25°C.

9. Handling:

   • Follow standard ESD precautions when handling the device to prevent damage.

(For reference only)