Details
BUY W25Q64JVZPIQ TR https://www.utsource.net/itm/p/12612431.html
Parameter | Symbol | Min | Typ | Max | Unit | Description |
---|---|---|---|---|---|---|
Supply Voltage | Vcc | 2.7 | - | 3.6 | V | Operating supply voltage range |
Standby Current | ISB | - | 1 | 5 | μA | Current in standby mode |
Active Current | IAV | - | 4 | 8 | mA | Current during active operations |
Programming Current | IPGM | - | 2 | 10 | mA | Current during programming |
Erase/Program Time | TERS | 2 | - | 5 | ms | Typical time for sector erase or page program |
Data Retention | DR | - | - | >20 | years | Guaranteed data retention period |
Operating Temperature | TOPR | -40 | - | 85 | °C | Operating temperature range |
Storage Temperature | TSTG | -40 | - | 85 | °C | Storage temperature range |
Memory Density | MD | - | - | - | 64 Mbit | Total memory capacity |
Package Type | PT | - | - | - | WSON8 | Package type |
Instructions for Use:
Power Supply: Ensure the device operates within the specified supply voltage range (2.7V to 3.6V). Exceeding this range can damage the component.
Standby Mode: To minimize power consumption, put the device into standby mode when not actively reading or writing data. The typical standby current is around 1μA.
Active Operations: During active operations like read, write, or erase, ensure the supply current does not exceed the maximum of 8mA.
Programming and Erasing: When programming or erasing sectors, ensure the programming current stays within the 2mA to 10mA range. The typical time for these operations is between 2ms and 5ms.
Environmental Conditions: Operate and store the device within the specified temperature ranges to avoid performance degradation or damage.
Data Handling: For reliable data storage, keep data within the device for no longer than the guaranteed retention period of over 20 years.
Package Handling: Handle the WSON8 package with care to prevent physical damage. Follow standard ESD precautions to avoid damaging the sensitive components inside.
Memory Management: Utilize the full 64 Mbit capacity efficiently by managing data writes and erases carefully to prolong the life of the flash memory.
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