W25Q64JVZPIQ TR

W25Q64JVZPIQ TR

Category: IC Chips

Specifications
Details

BUY W25Q64JVZPIQ TR https://www.utsource.net/itm/p/12612431.html

Parameter Symbol Min Typ Max Unit Description
Supply Voltage Vcc 2.7 - 3.6 V Operating supply voltage range
Standby Current ISB - 1 5 μA Current in standby mode
Active Current IAV - 4 8 mA Current during active operations
Programming Current IPGM - 2 10 mA Current during programming
Erase/Program Time TERS 2 - 5 ms Typical time for sector erase or page program
Data Retention DR - - >20 years Guaranteed data retention period
Operating Temperature TOPR -40 - 85 °C Operating temperature range
Storage Temperature TSTG -40 - 85 °C Storage temperature range
Memory Density MD - - - 64 Mbit Total memory capacity
Package Type PT - - - WSON8 Package type

Instructions for Use:

  1. Power Supply: Ensure the device operates within the specified supply voltage range (2.7V to 3.6V). Exceeding this range can damage the component.

  2. Standby Mode: To minimize power consumption, put the device into standby mode when not actively reading or writing data. The typical standby current is around 1μA.

  3. Active Operations: During active operations like read, write, or erase, ensure the supply current does not exceed the maximum of 8mA.

  4. Programming and Erasing: When programming or erasing sectors, ensure the programming current stays within the 2mA to 10mA range. The typical time for these operations is between 2ms and 5ms.

  5. Environmental Conditions: Operate and store the device within the specified temperature ranges to avoid performance degradation or damage.

  6. Data Handling: For reliable data storage, keep data within the device for no longer than the guaranteed retention period of over 20 years.

  7. Package Handling: Handle the WSON8 package with care to prevent physical damage. Follow standard ESD precautions to avoid damaging the sensitive components inside.

  8. Memory Management: Utilize the full 64 Mbit capacity efficiently by managing data writes and erases carefully to prolong the life of the flash memory.

(For reference only)

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