Details

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BUY FDS86140 https://www.utsource.net/itm/p/12612435.html

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Drain-Source On-Resistance	RDS(on)	VGS = 4.5V, ID = 2A	-	0.016	0.020	惟
Gate Threshold Voltage	VGS(th)	ID = 250渭A	1.0	1.5	2.5	V
Continuous Drain Current	ID	Tc = 25掳C	-	3.8	4.2	A
Power Dissipation	PD	Ta = 25掳C	-	780	-	mW
Total Device Dissipation	PD	Tc = 70掳C	-	440	-	mW
Junction Temperature	TJ	-	-55	-	150	掳C
Storage Temperature	TSTG	-	-55	-	150	掳C

Instructions for Use:

1. Mounting and Handling: Handle the FDS86140 with care to avoid damage to the leads and body. Ensure that the device is mounted on a suitable heat sink if operating at high power levels.

2. Biasing and Operation:

   • Ensure that the gate-source voltage (VGS) does not exceed the maximum rating.
   • Operate within the specified drain current (ID) limits to prevent overheating and potential failure.

3. Thermal Management:

   • Monitor the junction temperature (TJ) to ensure it remains within operational limits. Exceeding the maximum junction temperature can lead to reduced performance or device failure.

4. Storage:

   • Store in a dry, cool environment within the storage temperature range to prevent degradation.

5. Electrostatic Discharge (ESD) Sensitivity:

   • The FDS86140 is sensitive to ESD; use appropriate precautions such as grounding and anti-static packaging during handling and installation.

6. Testing:

   • Refer to the test conditions provided in the parameter table for accurate measurement of device parameters.

(For reference only)