Details
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| Parameter | Value | Unit |
|---|---|---|
| Part Number | PCK-112D2M | |
| Type | MOSFET | |
| Configuration | N-Channel | |
| Maximum Drain Voltage | 1200 | V |
| Maximum Gate-Source Voltage | 卤20 | V |
| Maximum Drain Current | 11.5 (Pulsed), 4.3 (Continuous) | A |
| Continuous Drain Current at Tc=25掳C | 4.3 | A |
| Continuous Drain Current at Tc=100掳C | 2.6 | A |
| Rds(on) at Vgs=10V | 1.5 | 惟 |
| Rds(on) at Vgs=15V | 1.2 | 惟 |
| Gate Charge | 70 | nC |
| Input Capacitance | 1850 | pF |
| Output Capacitance | 290 | pF |
| Reverse Transfer Capacitance | 120 | pF |
| Junction Temperature | -55 to +150 | 掳C |
| Storage Temperature | -55 to +150 | 掳C |
| Package | TO-220 |
Instructions for Use:
Handling Precautions:
- Handle with care to avoid damage to the device.
- Use proper ESD (Electrostatic Discharge) protection when handling the MOSFET.
Mounting:
- Ensure proper heat sinking if operating at high currents to maintain junction temperature within safe limits.
- Use thermal compound between the MOSFET and heat sink for better thermal conductivity.
Biasing:
- Apply gate voltage within the specified range to avoid damaging the gate oxide.
- Ensure the gate is properly biased to achieve the desired Rds(on).
Operation:
- Do not exceed the maximum drain voltage, current, or power dissipation ratings.
- Monitor the junction temperature to prevent overheating.
Testing:
- Use a suitable test setup to verify the performance parameters.
- Test the device under conditions that mimic its intended application.
Storage:
- Store in a dry, cool place to prevent moisture damage.
- Keep away from direct sunlight and extreme temperatures.
Soldering:
- Use a controlled soldering process to avoid excessive heat that could damage the device.
- Follow recommended soldering profiles to ensure reliable connections.
Troubleshooting:
- If the device fails to operate correctly, check for proper biasing, connections, and thermal management.
- Refer to the datasheet for detailed troubleshooting tips and failure analysis.
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