Details

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BUY 2SC1096 https://www.utsource.net/itm/p/12612445.html

Parameter	Symbol	Min	Typ	Max	Unit
Collector-Emitter Voltage	VCEO	-	-	80	V
Collector-Base Voltage	VCBO	-	-	100	V
Emitter-Base Voltage	VEBO	-5	-	-5	V
Collector Current	IC	-	-	3	A
Base Current	IB	-	-	0.3	A
Power Dissipation	PD	-	-	65	W
Junction Temperature	Tj	-55	-	150	掳C
Storage Temperature	Tstg	-55	-	150	掳C

Instructions for Use:

1. Handling Precautions:

   • Avoid exposing the transistor to temperatures outside the specified range.
   • Handle with care to prevent mechanical damage.

2. Mounting:

   • Ensure proper heat sinking to manage power dissipation, especially when operating near maximum ratings.
   • Use recommended mounting torque for the screws to avoid damaging the transistor.

3. Biasing:

   • Ensure that the base current (IB) is within the specified limits to avoid overheating and potential damage.
   • Use appropriate resistors to limit the base current when driving the transistor.

4. Operating Conditions:

   • Do not exceed the maximum collector-emitter voltage (VCEO) and collector-base voltage (VCBO).
   • The emitter-base voltage (VEBO) should not exceed -5V.

5. Storage:

   • Store in a dry, cool place to prevent moisture damage.
   • Follow anti-static precautions to protect the device from electrostatic discharge (ESD).

6. Testing:

   • Use a multimeter or a transistor tester to verify the functionality of the transistor.
   • Test the transistor under controlled conditions to avoid exceeding its maximum ratings.

7. Applications:

   • Suitable for general-purpose amplification and switching applications.
   • Ideal for audio amplifiers, power supplies, and motor control circuits.

(For reference only)