Details

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BUY FTCS120PS4PC https://www.utsource.net/itm/p/12612472.html

Parameter	Description	Value
Part Number	Full part number	FTCS120PS4PC
Type	Component type	MOSFET (Field-Effect Transistor)
Package	Package type	TO-252 (DPAK)
VDS (Max)	Drain-to-Source Voltage	60V
VGS (Max)	Gate-to-Source Voltage	卤20V
ID (Max)	Continuous Drain Current	120A
RDS(on) (Max)	On-State Resistance at VGS = 10V	4.5m惟
Power Dissipation (Max)	Power dissipation at Tc = 25掳C	120W
Operating Temperature Range	Junction temperature range	-55掳C to +175掳C
Storage Temperature Range	Storage temperature range	-65掳C to +150掳C
Thermal Resistance (R胃JC)	Junction-to-case thermal resistance	1.2掳C/W
Gate Charge (Qg)	Total gate charge	90nC
Input Capacitance (Ciss)	Input capacitance at VDS = 15V, VGS = 0V	2250pF
Output Capacitance (Coss)	Output capacitance at VDS = 15V, VGS = 0V	450pF
Reverse Transfer Capacitance (Crss)	Reverse transfer capacitance at VDS = 15V, VGS = 0V	350pF

Instructions for Use:

1. Mounting: Ensure proper heat sinking to maintain the junction temperature within the specified operating range.
2. Biasing: Apply the correct gate-to-source voltage (VGS) to control the device. Do not exceed the maximum VGS rating.
3. Current Handling: The device is capable of handling high currents, but ensure that the power dissipation does not exceed the maximum rating.
4. Thermal Management: Use appropriate thermal management techniques to keep the junction temperature within safe limits, especially under high current or high power conditions.
5. Storage: Store the device in a dry, cool environment within the specified storage temperature range to avoid damage.
6. Handling: Handle with care to avoid damage to the leads and the body of the device. Use ESD (Electrostatic Discharge) protection when handling the device.
7. Soldering: Follow recommended soldering profiles to avoid thermal shock and ensure reliable connections.

(For reference only)