Details
BUY CY62126EV30LL-55ZSXE https://www.utsource.net/itm/p/12612483.html
| Parameter | Description | Value |
|---|---|---|
| Device Type | High-Speed CMOS Static RAM | 128K x 8 |
| Package | TSOP II (44-Pin) | - |
| Operating Voltage | VCC | 3.0V to 3.6V |
| Standby Current | Icc (VCC = 3.6V, Ta = 25掳C) | 1.0 渭A (max) |
| Active Current | Icc (VCC = 3.6V, Ta = 25掳C, f = 55 MHz) | 25 mA (max) |
| Access Time | tAA (VCC = 3.6V, Ta = 25掳C, f = 55 MHz) | 55 ns (max) |
| Data Retention | tRET (VCC = 3.0V, Ta = 25掳C) | 20 years (min) |
| Temperature Range | Operating Temperature (Ta) | -40掳C to +85掳C |
| Storage Temperature | Storage Temperature (Tstg) | -65掳C to +150掳C |
| Input Voltage | VIH (High-Level Input Voltage) | 2.0V to VCC |
| Input Voltage | VIL (Low-Level Input Voltage) | 0V to 0.8V |
| Output Voltage | VOH (High-Level Output Voltage) | VCC - 0.4V (min) |
| Output Voltage | VOL (Low-Level Output Voltage) | 0.4V (max) |
| Write Cycle Time | tCYC (VCC = 3.6V, Ta = 25掳C, f = 55 MHz) | 70 ns (max) |
| Output Enable Time | tOE (VCC = 3.6V, Ta = 25掳C, f = 55 MHz) | 15 ns (max) |
| Output Disable Time | tOH (VCC = 3.6V, Ta = 25掳C, f = 55 MHz) | 15 ns (max) |
| Clock Skew | tCKS (VCC = 3.6V, Ta = 25掳C, f = 55 MHz) | 5 ns (max) |
| Power-down Mode | Power-down Current (VCC = 3.6V, Ta = 25掳C) | 0.1 渭A (max) |
| Endurance | Write Cycles | Unlimited |
| Data Integrity | Data Retention at End of Life | 20 years (min) |
Instructions for Use:
Power Supply:
- Ensure that the operating voltage (VCC) is within the specified range of 3.0V to 3.6V.
- Use appropriate decoupling capacitors (e.g., 0.1 渭F ceramic capacitors) close to the power pins to minimize noise.
Signal Timing:
- Ensure that all timing parameters, such as access time (tAA), write cycle time (tCYC), and output enable/disable times (tOE, tOH), are met to avoid data corruption or incorrect operation.
- Use a stable clock source with minimal skew (tCKS).
Temperature Considerations:
- Operate the device within the specified temperature range of -40掳C to +85掳C to ensure reliable performance.
- Store the device in a temperature range of -65掳C to +150掳C when not in use.
Power Management:
- To reduce power consumption, use the power-down mode by setting the chip enable (CE) and output enable (OE) pins high.
- The power-down current should be less than 0.1 渭A.
Data Integrity:
- The device has unlimited write cycles and a data retention period of at least 20 years under normal operating conditions.
Handling and Storage:
- Handle the device with care to avoid electrostatic discharge (ESD) damage.
- Store the device in a dry environment to prevent moisture-related issues.
Mounting and Soldering:
- Follow recommended soldering profiles and temperatures to ensure proper mounting on the PCB.
- Avoid excessive heat during soldering to prevent damage to the device.
Testing and Validation:
- Perform thorough testing and validation to ensure that the device meets all functional and performance requirements in the target application.
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