Details

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BUY IRFP640 https://www.utsource.net/itm/p/12612493.html

Parameter	Symbol	Value	Unit
Drain-Source Voltage	V(DS)	200	V
Gate-Source Voltage	V(GS)	卤20	V
Continuous Drain Current	I(D)	14	A
Pulse Drain Current	I(D pul)	56	A
Power Dissipation	P(TOT)	89	W
Junction Temperature	T(j)	-55 to +175	掳C
Storage Temperature	T(stg)	-55 to +150	掳C
Total Gate Charge	Q(g)	100	nC
Input Capacitance	Ciss	1700	pF
Output Capacitance	Coss	350	pF
Reverse Transfer Capacit.	Crss	380	pF

Instructions for Use:

1. Handling Precautions:

   • Avoid exceeding the maximum ratings provided in the table.
   • Ensure proper heat sinking when operating at high currents or power levels.

2. Installation:

   • Mount the device on a suitable heatsink to maintain junction temperature within specified limits.
   • Use insulated mounting hardware if the case is electrically connected to the drain.

3. Biasing and Drive Requirements:

   • Apply gate-source voltage (V(GS)) within the recommended range to avoid damage.
   • Ensure that the gate drive circuitry can supply sufficient current to charge and discharge the gate capacitance quickly, enhancing switching performance.

4. Testing:

   • When testing the device, ensure all parameters are within the specified limits.
   • Use appropriate safety measures and equipment to prevent electrical hazards.

5. Storage:

   • Store in a dry environment within the storage temperature range to prevent damage.
   • Handle with care to avoid mechanical damage to the package.

(For reference only)