Details

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BUY AT27C010-70JI https://www.utsource.net/itm/p/12612495.html

Parameter	Description	Value
Device Type	Flash Memory	AT27C010-70JI
Memory Size	Total memory capacity	1 Mbit (128K x 8)
Vcc Supply Voltage	Operating supply voltage	4.5 V to 5.5 V
Vpp Programming Voltage	Programming voltage	12.0 V 卤 0.5 V
Access Time	Maximum access time	70 ns
Package Type	Package style	28-PDIP, 28-SOIC
Operating Temperature	Temperature range for operation	-40掳C to +85掳C
Programming Cycle Time	Time required for programming cycle	5 ms
Data Retention	Guaranteed data retention	10 years
Write Cycles	Number of write cycles	100,000
Standby Current	Current in standby mode	20 渭A max
Active Current	Current during active operations	35 mA max

Instructions:

1. Power Supply Requirements: Ensure the device is powered within the specified Vcc range (4.5 V to 5.5 V). For programming, apply the Vpp voltage (12.0 V 卤 0.5 V) as specified.

2. Timing Considerations: The maximum access time is 70 ns. Ensure that your system timing allows for this delay when accessing the memory.

3. Programming: Apply the appropriate Vpp voltage and observe the 5 ms programming cycle time. Do not exceed the maximum number of write cycles (100,000).

4. Temperature Range: Operate the device within the temperature range of -40掳C to +85掳C to ensure reliable performance.

5. Current Consumption: Be aware of the standby and active current consumption values to manage power effectively in your design.

6. Data Integrity: Data retention is guaranteed for up to 10 years under proper operating conditions.

7. Handling Precautions: Handle the device with care to avoid electrostatic discharge (ESD) damage. Use proper ESD protection measures when handling or installing the component.

(For reference only)