Details

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BUY MX66C1024MC70 https://www.utsource.net/itm/p/12613856.html

Parameter	Description	Value
Device Type	Non-Volatile Static Random Access Memory (NVS RAM)	MX66C1024MC70
Memory Size	Total memory size	1 Mbit (128 K x 8)
Supply Voltage (Vcc)	Operating supply voltage range	1.71 V to 3.63 V
Operating Temperature	Industrial temperature range	-40掳C to +85掳C
Standby Current	Quiescent current in standby mode	1 渭A (Typical)
Active Current	Current during read/write operations	3 mA (Typical)
Access Time	Maximum access time for read/write operations	70 ns
Package Type	Type of package	SOIC-8, TSSOP-8
Write Cycle	Time required for a write cycle	1 ms (Maximum)
Endurance	Number of write cycles per bit	1 million cycles
Data Retention	Minimum data retention period	10 years

Instructions for Use:

1. Power Supply: Ensure the device is powered within the specified supply voltage range of 1.71 V to 3.63 V.
2. Temperature Considerations: Operate the device within the industrial temperature range of -40掳C to +85掳C for reliable performance.
3. Handling Precautions: Handle with care to avoid static damage. Use appropriate ESD protection measures.
4. Programming: Follow the timing specifications for access times and write cycles to prevent data corruption.
5. Storage: Store in a dry environment when not in use to maintain data integrity over the specified retention period.
6. Installation: Ensure proper installation into compatible sockets or PCBs, paying attention to pin orientation and soldering if applicable.

(For reference only)