SKT50/16E UNF

SKT50/16E UNF


Specifications
Details

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Parameter Description Value
Part Number Full part number SKT50/16E UNF
Type Type of device MOSFET
Package Package type TO-220
Drain Current (Id) Continuous drain current at 25°C 50A
Breakdown Voltage (Bvdss) Drain-to-source breakdown voltage 16V
Gate Charge (Qg) Total gate charge 49 nC
Rds(on) On-resistance at Vgs=10V 3.5 mΩ
Junction Temperature (Tj) Maximum operating junction temperature -55°C to +175°C
Storage Temperature (Tstg) Temperature range for storage -55°C to +175°C
Mounting Type Method of mounting Through-hole

Instructions:

  1. Handling: Handle with care to avoid damage to the component and ensure proper functioning.
  2. Mounting: Ensure correct orientation during installation. Follow the manufacturer’s guidelines for mounting torque and thermal considerations.
  3. Soldering: Use appropriate soldering techniques. Avoid excessive heat as it can damage the device. Recommended soldering temperature is not to exceed 260°C for a maximum of 10 seconds.
  4. Storage: Store in a dry, cool place away from direct sunlight and corrosive substances.
  5. Electrostatic Discharge (ESD) Protection: MOSFETs are sensitive to ESD. Use proper anti-static precautions when handling.
  6. Applications: Suitable for power switching applications, motor control, and DC-DC converters among others.
(For reference only)

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