Details

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BUY FZ750R65KE3 https://www.utsource.net/itm/p/12614245.html

Below is the parameter table and instructions for the FZ750R65KE3, which is a 650V IGBT module.

Parameter Table

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Emitter Voltage	VCEO	IC = 0, Tj = 25°C	-	-	650	V
Emitter-Collector Voltage	VECS	IC = 0, Tj = 25°C	-	-	650	V
Gate-Emitter Voltage	VGE	IG = 0, Tj = 25°C	-15	0	15	V
Continuous Collector Current	IC	TC = 25°C	-	750	-	A
Pulsed Collector Current	ICM	tp = 10 μs, Tj = 25°C	-	1500	-	A
Thermal Resistance (Case to Ambient)	Rth(j-c)	-	-	0.18	-	K/W
Thermal Resistance (Junction to Case)	Rth(j-c)	-	-	0.15	-	K/W
Turn-On Time	ton	IC = 750 A, VGE = 15 V, Rg = 10 Ω	-	0.4	-	μs
Turn-Off Time	toff	IC = 750 A, VGE = -15 V, Rg = 10 Ω	-	0.5	-	μs
Total Switching Energy	Esw	IC = 750 A, VCE = 650 V, fs = 10 kHz	-	120	-	mJ
Forward Voltage Drop	VCE(sat)	IC = 750 A, VGE = 15 V, Tj = 25°C	-	1.8	-	V

Instructions

1. Handling and Storage:

   • Handle the device with care to avoid mechanical damage.
   • Store the device in a dry environment to prevent moisture damage.
   • Use proper ESD protection when handling the device to avoid damage from static electricity.

2. Mounting:

   • Ensure that the mounting surface is clean and flat.
   • Apply a suitable thermal interface material (TIM) between the module and the heat sink to ensure good thermal conductivity.
   • Tighten the mounting screws to the recommended torque value to avoid over-tightening or under-tightening.

3. Electrical Connections:

   • Use high-quality, low-inductance wiring for all electrical connections.
   • Ensure that the gate drive circuit is properly designed to provide the necessary gate voltage and current.
   • Use appropriate snubber circuits to protect against voltage transients.

4. Thermal Management:

   • Monitor the junction temperature (T_j) to ensure it does not exceed the maximum rated value.
   • Use a heatsink with sufficient cooling capacity to maintain the module within its operating temperature range.
   • Consider forced air cooling or liquid cooling for high-power applications.

5. Operation:

   • Operate the device within the specified voltage and current ratings.
   • Avoid operating the device at temperatures above the maximum junction temperature.
   • Ensure that the gate drive signals are clean and free from noise to prevent misfiring.

6. Testing:

   • Perform initial testing at reduced power levels to verify correct operation.
   • Use appropriate test equipment to measure key parameters such as V_CE(sat), I_C, and switching times.
   • Follow safety guidelines when testing high-voltage and high-current circuits.

By following these instructions, you can ensure reliable and efficient operation of the FZ750R65KE3 IGBT module.

(For reference only)