Details

---

BUY 2SA995 https://www.utsource.net/itm/p/12614360.html

Parameter	Symbol	Conditions	Min	Typ.	Max	Unit
Collector-Emitter Voltage	VCEO	IC = 0	-	-	80	V
Collector-Base Voltage	VCBO	IC = 0	-	-	90	V
Emitter-Base Voltage	VEBO	IE = 5mA	-5.0	-	-1.0	V
Collector Current	IC	VCE = 30V	-	4	6	A
DC Current Gain	hFE	IC = 150mA, VCE = 5V	20	70	200	-
Transition Frequency	fT	IC = 150mA	-	8	-	MHz
Storage Temperature	Tstg		-55	-	150	掳C

Instructions for Use:

1. Mounting: Ensure the transistor is mounted on a suitable heatsink if it will be operating at high currents or power levels.
2. Biasing: Proper biasing is essential to ensure reliable operation and prevent thermal runaway. Use a stable base resistor to control the base current.
3. Heat Management: Monitor the junction temperature. The maximum allowable junction temperature is typically lower than the storage temperature limit.
4. Protection Diodes: For switching applications, use protection diodes across inductive loads to prevent voltage spikes that can damage the transistor.
5. Storage and Handling: Store in a dry environment and handle with care to avoid static damage. Follow anti-static precautions when handling.
6. Soldering: Do not exceed the recommended soldering temperatures and times to avoid damaging the device.

This table and set of instructions provide key parameters and guidelines for using the 2SA995 transistor effectively and safely.

(For reference only)