Details
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| Parameter | Description | Value |
|---|---|---|
| Type | Silicon Controlled Rectifier (SCR) | - |
| Maximum RMS Voltage (Vdrm) | Repetitive Peak Reverse Voltage | 400 V |
| Maximum On-State Current (It(RMS)) | RMS On-State Current (Tj = 100掳C) | 5 A |
| Maximum Surge Current (Ism) | Non-Repetitive Surge Current (8.3 ms) | 200 A |
| Holding Current (Ih) | Minimum Holding Current | 50 mA |
| Gate Trigger Current (Igt) | Maximum Gate Trigger Current | 10 mA |
| Power Dissipation (Ptot) | Total Power Dissipation (Tc = 75掳C) | 75 W |
| Operating Temperature (Tj) | Junction Temperature Range | -40掳C to 125掳C |
| Storage Temperature (Tstg) | Storage Temperature Range | -65掳C to 150掳C |
| Package Type | Case Type | TO-220 |
Instructions for Use
Mounting:
- Ensure proper heat sinking to maintain the junction temperature within the specified range.
- Use a thermal compound between the device and the heatsink to improve thermal conductivity.
Gate Triggering:
- Apply a gate current greater than the maximum gate trigger current (Igt) to turn on the SCR.
- Once triggered, the SCR will remain on as long as the anode current exceeds the holding current (Ih).
Surge Handling:
- The SCR can handle non-repetitive surge currents up to 200 A for 8.3 ms. Ensure that surge conditions do not exceed these limits to avoid damage.
Overvoltage Protection:
- Use appropriate overvoltage protection circuits to prevent damage from voltage spikes exceeding the maximum repetitive peak reverse voltage (Vdrm).
Thermal Management:
- Monitor the junction temperature (Tj) to ensure it does not exceed 125掳C. Proper cooling is essential, especially under high current conditions.
Storage:
- Store the device in a dry environment with temperatures between -65掳C and 150掳C to prevent degradation.
Handling:
- Handle the device with care to avoid mechanical stress, which can affect performance and reliability.
Testing:
- Test the device in a controlled environment to ensure it meets the specified parameters before integrating it into the final application.
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